TW060Z120C - Toshiba
Description: N-ch SiC MOSFET, 1200 V, 0.060 Ω(typ.)@18 V, TO-247-4L(X), 3rd Gen.
Description: N-ch SiC MOSFET, 1200 V, 0.060 Ω(typ.)@18 V, TO-247-4L(X), 3rd Gen.
TW060Z120C
Yes
Active
TO-247-4L(X), 4 PIN
EAR99
Toshiba America Electronic Components
6
DRAIN
SINGLE WITH BUILT-IN DIODE
1200 V
36 A