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TW107N65C - Toshiba

Description: N-ch SiC MOSFET, 650 V, 0.107 Ω(typ.)@18V, TO-247, 3rd Gen.

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PCB Footprints
TW107N65C - Toshiba PCB footprint - Other - Other - 2-16L1A
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TW107N65C - Toshiba  - 3D model - Other - 2-16L1A
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TW107N65C Details

  • Manufacturer Part Number:

    TW107N65C

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.7 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    76 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

TW107N65C Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a metal plate for further heat dissipation.
  • To ensure reliability in high-temperature applications, it is essential to follow Toshiba's recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink or thermal management system to keep the device within the recommended temperature range.
  • The maximum allowed voltage for TW107N65C is 650V. Exceeding this voltage can lead to reduced reliability and potentially cause damage to the device. It is essential to ensure that the device operates within the recommended voltage range to maintain its reliability and performance.
  • The TW107N65C does not have built-in overcurrent and overvoltage protection. It is recommended to use external protection circuits, such as fuses, current sensors, and voltage regulators, to prevent damage to the device and ensure safe operation.
  • The recommended gate drive voltage for TW107N65C is between 10V and 15V. A higher gate drive voltage can improve the device's switching performance, but it may also increase power consumption and heat generation. A lower gate drive voltage can reduce power consumption but may compromise switching performance.

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TW107N65C Overview

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