HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-88, SC-70, 6 PIN
Pin Count:
6
Manufacturer Package Code:
419B-02
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
11 Weeks
Manufacturer:
onsemi
YTEOL:
7
Collector Current-Max (IC):
0.2 A
Collector-Emitter Voltage-Max:
50 V
Configuration:
SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE):
200
JESD-30 Code:
R-PDSO-G6
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
6
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
NPN AND PNP
Power Dissipation-Max (Abs):
0.256 W
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
GULL WING
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
AMPLIFIER
Transistor Element Material:
SILICON
Transition Frequency-Nom (fT):
114 MHz
UMZ1NT1G Frequently Asked Questions (FAQs)
The recommended operating temperature range for the UMZ1NT1G is -40°C to 150°C, although the device can withstand temperatures up to 200°C for short periods.
To ensure proper biasing, connect the anode to a voltage source through a current-limiting resistor, and the cathode to a voltage source or ground through a current-limiting resistor. Consult the datasheet for specific biasing requirements.
The maximum allowable power dissipation for the UMZ1NT1G is 500 mW. Exceeding this limit can cause device damage or failure.
Yes, the UMZ1NT1G can be used in switching applications, but it's essential to ensure the device is properly biased and the switching frequency is within the recommended range to avoid overheating or device damage.
To prevent electrostatic discharge (ESD) damage, handle the UMZ1NT1G by the body, avoid touching the pins, and use an ESD wrist strap or mat when handling the device.
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UMZ1NT1G Overview
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