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UPA1560H-AZ - Renesas Electronics

Description: SMALL SIGNAL N-CHANNEL MOSFET

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PCB Footprints
UPA1560H-AZ - Renesas Electronics PCB footprint - Other - Other - 10-pin SIP
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UPA1560H-AZ - Renesas Electronics  - 3D model - Other - 10-pin SIP
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UPA1560H-AZ Details

  • Manufacturer Part Number:

    UPA1560H-AZ

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SIP-10

  • Pin Count:

    10

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    0.9 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JESD-30 Code:

    R-PSFM-T10

  • Number of Elements:

    4

  • Number of Terminals:

    10

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3.7 W

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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UPA1560H-AZ Overview

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Part Image UPA1560H Renesas Electronics Corporation

Power Field-Effect Transistor, 3A I(D), 120V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET