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UT6J3TCR1 - ROHM Semiconductor

Description: -20V Pch+Pch Power MOSFET,VDSS: -20V,RDS(on)(Max.): 85mΩ,ID: ±3A,PD: 2W.

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UT6J3TCR1 - ROHM Semiconductor PCB footprint - Other - Other - UT6J3TCR1
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UT6J3TCR1 - ROHM Semiconductor  - 3D model - Other - UT6J3TCR1
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UT6J3TCR1 Details

  • Manufacturer Part Number:

    UT6J3TCR1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN2020-8D, 8 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-12-09

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.32

  • Avalanche Energy Rating (Eas):

    0.6 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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UT6J3TCR1 Overview

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