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V20PWM45HM3/I - Vishay

Description: Schottky Diodes & Rectifiers 20A If(AV) TO-252AE AEC-Q101 Qualified

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V20PWM45HM3/I - Vishay PCB footprint - Other - Other - V20PWM45HM3/I-2
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V20PWM45HM3/I Details

  • Manufacturer Part Number:

    V20PWM45HM3/I

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    5 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.32

  • Additional Feature:

    FREE WHEELING DIODE, LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.66 V

  • JEDEC-95 Code:

    TO-252AE

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    200 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    20 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    45 V

  • Reverse Current-Max:

    700 µA

  • Reverse Test Voltage:

    45 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

V20PWM45HM3/I Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the device, using a minimum of 2 oz copper thickness, and ensuring a minimum of 1 mm clearance around the device for airflow. Additionally, using thermal vias under the device can help to dissipate heat more efficiently.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensuring good airflow and using a heat sink can help to reduce the device's junction temperature.
  • The recommended soldering profile for the V20PWM45HM3/I involves a peak temperature of 260°C, with a dwell time of 10-30 seconds above 220°C. It is also recommended to use a solder with a melting point of 217°C or higher.
  • To protect the device from EOS and ESD, it is recommended to use a voltage clamp or transient voltage suppressor (TVS) on the input lines, and to follow proper handling and storage procedures to prevent ESD damage.
  • The recommended storage and handling procedure for the V20PWM45HM3/I involves storing the devices in their original packaging, away from direct sunlight and moisture. It is also recommended to handle the devices by the body, rather than the leads, to prevent ESD damage.

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V20PWM45HM3/I Overview

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Part Image V20PW45HM3/I Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 45V V(RRM), Silicon, TO-252AE