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V40PWM10C-M3/I - Vishay

Description: Schottky Diodes & Rectifiers Dual Common Cathde TO-252AE 40A If(AV)

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V40PWM10C-M3/I Details

  • Manufacturer Part Number:

    V40PWM10C-M3/I

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    5 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.38

  • Additional Feature:

    FREE WHEELING DIODE, LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.89 V

  • JEDEC-95 Code:

    TO-252AE

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    240 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    20 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    400 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

V40PWM10C-M3/I Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing the device on a thermal pad with a minimum size of 10mm x 10mm, and ensuring that the pad is connected to a large copper area on the PCB to dissipate heat effectively.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet, and to ensure good thermal management through proper PCB design and heat sinking.
  • The device can withstand voltage spikes or transients up to 50V for a duration of 100ns, as specified in the datasheet. However, it is recommended to use a TVS diode or other transient protection device to protect the device from voltage spikes or transients that exceed this limit.
  • The power dissipation of the device can be calculated using the formula Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current. The values for these parameters can be obtained from the datasheet or by measuring them in the specific application.
  • The recommended gate drive voltage is 10V to 15V, and the recommended gate drive current is 1A to 2A, depending on the specific application and switching frequency. A higher gate drive voltage and current can result in faster switching times and lower switching losses.

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V40PWM10C-M3/I Overview

Use the download button to access the V40PWM10C-M3/I 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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