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VCR11N - InterFET

Description: JFET N-Channel(Dual) -25V Low Ciss

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PCB Footprints
VCR11N - InterFET PCB footprint - Other - Other - TO-71_Master_1
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3D Models
VCR11N - InterFET  - 3D model - Other - TO-71_Master_1
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VCR11N Details

  • Manufacturer Part Number:

    VCR11N

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    7.5 pF

  • JEDEC-95 Code:

    TO-71

  • JESD-30 Code:

    O-MBCY-W6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

VCR11N Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the VCR11N is -55°C to 150°C, although the datasheet only specifies a range of -40°C to 125°C for certain parameters.
  • To ensure proper biasing, it's essential to follow the recommended biasing circuit and voltage levels specified in the datasheet. Additionally, the VCR11N requires a negative voltage supply (VGG) to be applied to the gate terminal, typically in the range of -2V to -5V.
  • The maximum allowable power dissipation for the VCR11N is dependent on the package type and thermal resistance. For the TO-220 package, the maximum power dissipation is approximately 75W, while for the TO-263 package, it's around 50W. However, it's essential to perform thermal calculations and ensure proper heat sinking to prevent overheating.
  • While the VCR11N is primarily designed as a voltage-controlled resistor, it can be used in high-frequency applications as a switch or amplifier. However, it's crucial to consider the device's frequency response, parasitic capacitances, and inductances to ensure optimal performance. Additionally, proper PCB layout and component selection are vital to minimize signal degradation and ensure reliable operation.
  • To protect the VCR11N from ESD, it's essential to follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and packaging materials. Additionally, ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices or circuits in the final application.

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