VNB35N07-E - STMicroelectronics

VNB35N07-E Details

• Manufacturer Part Number:

  VNB35N07-E

• Brand Name:

  STMicroelectronics

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• Package Description:

  D2PAK-3/2

• ECCN Code:

  EAR99

• Manufacturer:

  STMicroelectronics

• YTEOL:

  0

• Avalanche Energy Rating (Eas):

  100 mJ

• Configuration:

  COMPLEX

• DS Breakdown Voltage-Min:

  60 V

• Drain Current-Max (ID):

  0.5 A

• Drain-source On Resistance-Max:

  0.035 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  10 pF

• JESD-30 Code:

  R-PSSO-G2

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  3

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  245

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  125 W

• Pulsed Drain Current-Max (IDM):

  1.3 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn) - annealed

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  1350 ns

• Turn-on Time-Max (ton):

  800 ns