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VND10N06 - STMicroelectronics

Description: "OMNIFET" fully autoprotected Power MOSFET , N-Channel, 0.3Ω, 10A 50 V to 70 V, 150 µA, -55 °C to +150 °C

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VND10N06 - STMicroelectronics - PCB symbol
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VND10N06 - STMicroelectronics PCB footprint - Other - Other - DPAK_2026-2.5
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VND10N06 Details

  • Manufacturer Part Number:

    VND10N06

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-251

  • Package Description:

    ROHS COMPLIANT, TO-252, DPAK-3/2

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Built-in Protections:

    TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

  • Input Characteristics:

    SCHMITT TRIGGER

  • Interface IC Type:

    BUFFER OR INVERTER BASED PERIPHERAL DRIVER

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Length:

    6.5 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    2

  • Output Characteristics:

    OPEN-DRAIN

  • Output Current Flow Direction:

    SINK

  • Output Peak Current Limit-Nom:

    10 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TO-252

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    2.63 mm

  • Surface Mount:

    YES

  • Technology:

    MOS

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    2.28 mm

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    2.3 µs

  • Turn-on Time:

    1.8 µs

  • Width:

    6.1 mm

VND10N06 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the VND10N06 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the boundaries of the maximum ratings and ensure that the device is not subjected to excessive voltage, current, or temperature stress.
  • The junction-to-case thermal resistance (RθJC) for the VND10N06 is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet. For example, the thermal resistance from junction to ambient (RθJA) is given as 62°C/W. You can use the following formula to estimate RθJC: RθJC = RθJA - RθCS, where RθCS is the thermal resistance from case to sink (usually around 1-2°C/W).
  • The recommended gate drive voltage for the VND10N06 is not explicitly stated in the datasheet. However, as a general rule, it's recommended to use a gate drive voltage between 4.5V and 10V to ensure reliable switching and minimize power losses. A higher gate drive voltage can reduce the switching time and improve the device's performance, but it may also increase the power consumption and electromagnetic interference (EMI).
  • The VND10N06 is a general-purpose power MOSFET, and its high-frequency performance is not explicitly characterized in the datasheet. However, based on its switching characteristics, it's suitable for switching frequencies up to several hundred kHz. For higher-frequency applications, it's recommended to use a MOSFET specifically designed for high-frequency switching, such as those in the STMicroelectronics' MDmesh series.
  • To ensure the VND10N06 is properly biased and configured for linear operation, you should follow the recommended operating conditions and biasing schemes provided in the datasheet. This typically involves setting the gate-source voltage (VGS) to a value that ensures the device is operating in the linear region, and providing a suitable drain-source voltage (VDS) and current (ID) to maintain the desired output voltage and current.

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VND10N06 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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