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VND10N0613TR - STMicroelectronics

Description: "OMNIFET" fully autoprotected Power MOSFET DPAK TO-252 , 0.3Ω , 60V , 10A , -55°C to 150°C

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VND10N0613TR - STMicroelectronics - PCB symbol
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VND10N0613TR - STMicroelectronics PCB footprint - Other - Other - DPAK_2026-4.2
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VND10N0613TR Details

  • Manufacturer Part Number:

    VND10N0613TR

  • Brand Name:

    STMicroelectronics

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252

  • Package Description:

    SOP, TO-252

  • Pin Count:

    3

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Built-in Protections:

    TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

  • Interface IC Type:

    BUFFER OR INVERTER BASED PERIPHERAL DRIVER

  • JESD-30 Code:

    R-PSSO-G2

  • Length:

    6.5 mm

  • Number of Functions:

    1

  • Number of Terminals:

    2

  • Output Current Flow Direction:

    SINK

  • Output Peak Current Limit-Nom:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    TO-252

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    2.63 mm

  • Surface Mount:

    YES

  • Technology:

    MOS

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    2.25 mm

  • Terminal Position:

    SINGLE

  • Turn-off Time:

    2.3 µs

  • Turn-on Time:

    1.8 µs

  • Width:

    6.1 mm

VND10N0613TR Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the VND10N0613TR is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Typically, this involves connecting the gate to a voltage source, such as a voltage regulator or a resistive divider, and ensuring the drain-source voltage is within the recommended range.
  • For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity, such as using thermal vias and a solid copper plane. Additionally, ensure the device is mounted on a heat sink or a thermal pad to dissipate heat efficiently. Follow the recommended PCB layout guidelines and thermal management strategies outlined in the datasheet and application notes.
  • To protect the VND10N0613TR from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Ensure the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes, in the circuit design.
  • The recommended gate drive circuits for the VND10N0613TR typically involve using a gate driver IC or a discrete transistor-based driver. The specific circuit design will depend on the application requirements, such as the switching frequency, voltage, and current. Consult the datasheet and application notes for recommended gate drive circuits and design guidelines.

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VND10N0613TR Overview

Use the download button to access the VND10N0613TR schematic symbol and PCB footprint.
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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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