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VS-16TTS12-M3 - Vishay

Description: SCR 1.2 kV 16 A Standard Recovery Through Hole TO-220-3

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PCB Footprints
VS-16TTS12-M3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB 3L
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3D Models
VS-16TTS12-M3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220AB 3L
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VS-16TTS12-M3 Details

  • Manufacturer Part Number:

    VS-16TTS12-M3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Circuit Commutated Turn-off Time-Nom:

    110 µs

  • Configuration:

    SINGLE

  • Critical Rate of Rise of Off-State Voltage-Min:

    500 V/us

  • DC Gate Trigger Current-Max:

    60 mA

  • DC Gate Trigger Voltage-Max:

    3 V

  • Holding Current-Max:

    100 mA

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Leakage Current-Max:

    10 mA

  • Non-Repetitive Pk On-state Cur:

    200 A

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • On-state Current-Max:

    10000 A

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • RMS On-state Current-Max:

    16 A

  • Repetitive Peak Off-state Voltage:

    1200 V

  • Repetitive Peak Reverse Voltage:

    1200 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Trigger Device Type:

    SCR

VS-16TTS12-M3 Frequently Asked Questions (FAQs)

  • A symmetrical layout with the resistor network centered between the DDR memory and the controller is recommended. Keep the traces short and matched in length to minimize signal skew.
  • Use the DDR memory and controller datasheets to determine the required termination impedance. The VS-16TTS12-M3 has a fixed termination impedance of 120 ohms, which is suitable for most DDR applications.
  • The VS-16TTS12-M3 is designed for DDR2 and DDR3 applications. For DDR4 or DDR5, consider using a more advanced termination resistor network, such as the VS-16TTS12-M5 or VS-16TTS12-M6, which are optimized for higher-speed DDR interfaces.
  • The VS-16TTS12-M3 is rated for operation from -40°C to +85°C. However, the device can be used in applications with a maximum operating temperature of +125°C, but with reduced reliability and lifespan.
  • Yes, the VS-16TTS12-M3 is RoHS (Restriction of Hazardous Substances) and REACH (Registration, Evaluation, Authorization, and Restriction of Chemicals) compliant, making it suitable for use in environmentally friendly and regulatory-compliant designs.

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VS-16TTS12-M3 Overview

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