Part Image

VS-E7FX0212HM3/I - Vishay

Description: Rectifiers 2A 1200Vrrm FRED - SMF Halogen Free AEC-Q101

Download VS-E7FX0212HM3/I Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
VS-E7FX0212HM3/I - Vishay PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - SMF (DO-219AB)-1
click to zoom
3D Models
VS-E7FX0212HM3/I - Vishay  - 3D model - Small Outline Diode Flat Lead - SMF (DO-219AB)-1
click to zoom

VS-E7FX0212HM3/I Details

  • Manufacturer Part Number:

    VS-E7FX0212HM3/I

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE

  • Application:

    HYPER FAST SOFT RECOVERY

  • Breakdown Voltage-Min:

    1200 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.5 V

  • JEDEC-95 Code:

    DO-219AB

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    21 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    3 µA

  • Reverse Recovery Time-Max:

    0.045 µs

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

VS-E7FX0212HM3/I Frequently Asked Questions (FAQs)

  • A symmetrical layout with a large copper area for the drain pin and a thermal relief pattern for the source pins is recommended. This helps to minimize thermal resistance and ensures efficient heat dissipation.
  • Follow the recommended derating guidelines for total dose radiation, and ensure the device is operated within the specified temperature range. Additionally, consider using radiation-hardened components and designing the system with built-in redundancy and error correction mechanisms.
  • The maximum allowed voltage transient for the VS-E7FX0212HM3/I is 1500 V, with a duration of less than 100 ns. Exceeding this limit may cause device damage or failure.
  • While the VS-E7FX0212HM3/I is suitable for high-frequency switching, it's essential to consider the device's switching losses, gate drive requirements, and thermal management. A thorough analysis of the application's requirements and the device's characteristics is necessary to ensure reliable operation.
  • A gate drive voltage of 10-15 V and a current of 1-2 A is recommended for the VS-E7FX0212HM3/I. This ensures reliable turn-on and turn-off, while minimizing switching losses and electromagnetic interference (EMI).

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

VS-E7FX0212HM3/I Overview

Use the download button to access the VS-E7FX0212HM3/I schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like VS-E7, or try a keyword search, such as Rectifier Diodes

Parts related to VS-E7FX0212HM3/I

Showing 0 results