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VS110VLNVWMTR - ROHM Semiconductor

Description: 177V Clamp 1.1A Ipp Tvs Diode Surface Mount PMDE

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PCB Footprints
VS110VLNVWMTR - ROHM Semiconductor PCB footprint - Other - Other - PMDE_2025-1.6
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3D Models
VS110VLNVWMTR - ROHM Semiconductor  - 3D model - Other - PMDE_2025-1.6
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VS110VLNVWMTR Details

  • Manufacturer Part Number:

    VS110VLNVWMTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.16

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    138 V

  • Breakdown Voltage-Min:

    122 V

  • Breakdown Voltage-Nom:

    130 V

  • Case Connection:

    CATHODE

  • Clamping Voltage-Max:

    177 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-F2

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    200 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    1 W

  • Reference Standard:

    IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    110 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    110 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

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