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WSB5558N-2/TR - Will Semiconductor

Description: 30uA@30V 30V Single 450mV@100mA 100mA DFN1006-2L Schottky Barrier Diodes (SBD) ROHS

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PCB Footprints
WSB5558N-2/TR - Will Semiconductor PCB footprint - Other - Other - WSB5558N-2/TR-2
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3D Models
WSB5558N-2/TR - Will Semiconductor  - 3D model - Other - WSB5558N-2/TR-2
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WSB5558N-2/TR Details

  • Manufacturer Part Number:

    WSB5558N-2/TR

  • Part Life Cycle Code:

    Contact Manufacturer

  • Package Description:

    DFN1006-2L, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Will Semiconductor Ltd

  • Additional Feature:

    LOW LEAKAGE CURRENT

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.45 V

  • JESD-30 Code:

    R-PBCC-N2

  • Non-rep Pk Forward Current-Max:

    1 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    0.1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Packing Method:

    TR

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    30 µA

  • Reverse Test Voltage:

    30 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

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WSB5558N-2/TR Overview

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