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ZTX553 - Diodes Incorporated

Description: Bipolar (BJT) Transistor PNP 100 V 1 A 150MHz 1 W Through Hole E-Line (TO-92 compatible) , -55°C ~ 200°C (TJ)

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ZTX553 - Diodes Incorporated PCB footprint - Other - Other - TO-92_2025-1.1
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ZTX553 - Diodes Incorporated  - 3D model - Other - TO-92_2025-1.1
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ZTX553 Details

  • Manufacturer Part Number:

    ZTX553

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    TO-92

  • Package Description:

    TO-92 COMPATIBLE, E-LINE PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    1

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    R-PSIP-W3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    WIRE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    150 MHz

ZTX553 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the ZTX553 is -55°C to 150°C.
  • Yes, the ZTX553 is suitable for high-frequency applications up to 5 GHz due to its low capacitance and high transition frequency (fT).
  • The maximum collector-emitter voltage (Vceo) for the ZTX553 is 30V.
  • Yes, the ZTX553 can be used in switching applications due to its low saturation voltage (Vce(sat)) and high current gain (hFE).
  • Yes, the ZTX553 is a low-noise transistor with a low noise figure (NF) of 2.5 dB, making it suitable for low-noise amplifier applications.

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ZTX553 Alternates

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Part Image ZTX553 Zetex / Diodes Inc

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

Part Image ZTX553STZ Zetex / Diodes Inc

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon

Part Image FXT553STOB Zetex / Diodes Inc

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon

Part Image FXT553STZ Diodes Incorporated

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon

Part Image FXT553STOE Diodes Incorporated

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon

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