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ZTX855 - Diodes Incorporated

Description: Diodes Inc ZTX855 NPN Bipolar Transistor, 4 A, 150 V, 3-Pin TO-92

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ZTX855 - Diodes Incorporated PCB footprint - Other - Other - ZTX855-3
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ZTX855 - Diodes Incorporated  - 3D model - Other - ZTX855-3
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ZTX855 Details

  • Manufacturer Part Number:

    ZTX855

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    TO-92

  • Package Description:

    GREEN, TO-92 COMPATIBLE, E-LINE PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    40 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    1

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    150 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PSIP-W3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    WIRE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    90 MHz

ZTX855 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the ZTX855 is -55°C to 150°C.
  • Yes, the ZTX855 is suitable for high-frequency applications up to 5 GHz due to its low capacitance and high transition frequency (fT).
  • The maximum collector-emitter voltage (Vceo) for the ZTX855 is 80V.
  • Yes, the ZTX855 can be used in switching applications due to its low saturation voltage (Vce(sat)) and high current gain (hFE).
  • Yes, the ZTX855 is a low-noise transistor with a low noise figure (NF) of 2.5 dB, making it suitable for low-noise amplifier applications.

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ZTX855 Overview

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Part Image ZTX855STOA Diodes Incorporated

Power Bipolar Transistor, 4A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image ZTX855STZ Zetex / Diodes Inc

Power Bipolar Transistor, 4A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3

Part Image ZTX855STOA Zetex / Diodes Inc

Power Bipolar Transistor, 4A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image ZTX855STOB Zetex / Diodes Inc

Power Bipolar Transistor, 4A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin