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ZXMP10A18GTA - Diodes Incorporated

Description: MOSFET P-Channel 100V 3.7A SOT223 Diodes Inc ZXMP10A18GTA P-channel MOSFET Transistor, 3.7 A, 100 V, 3+Tab-Pin SOT-223

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ZXMP10A18GTA - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT223
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ZXMP10A18GTA - Diodes Incorporated  - 3D model - SOT223 (3-Pin) - SOT223
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ZXMP10A18GTA Details

  • Manufacturer Part Number:

    ZXMP10A18GTA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    SOT-223

  • Pin Count:

    4

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    1

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 7 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.9 W

  • Pulsed Drain Current-Max (IDM):

    16.5 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ZXMP10A18GTA Frequently Asked Questions (FAQs)

  • A good PCB layout for the ZXMP10A18GTA should include a large copper area for heat dissipation, with multiple vias connecting the top and bottom layers to reduce thermal resistance. A minimum of 2oz copper thickness is recommended.
  • To ensure stable operation with a high-capacitance output capacitor, add a 1-2 ohm resistor in series with the capacitor to dampen oscillations. Additionally, ensure the capacitor's ESR is within the recommended range.
  • The maximum allowed voltage transient on the input pin is 20% above the maximum recommended operating voltage, but not exceeding 18V. Exceeding this may cause damage to the device.
  • While the ZXMP10A18GTA is rated for operation up to 125°C, it's essential to consider the device's power dissipation and thermal management in high-temperature environments. Ensure proper heat sinking and consider derating the device's output current accordingly.
  • To protect the ZXMP10A18GTA from reverse voltage, add a diode (e.g., 1N4007) in parallel with the input capacitor, anode to the input pin, and cathode to the GND pin. This will prevent reverse voltage damage.

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ZXMP10A18GTA Overview

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Part Image ZXMP10A18GTA Zetex / Diodes Inc

Power Field-Effect Transistor, 2.6A I(D), 100V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image ZXMP10A18GTC Diodes Incorporated

Power Field-Effect Transistor, 2.6A I(D), 100V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET