Part Image

ZXMS6003GTA - Diodes Incorporated

Description: Diodes Inc ZXMS6003GTA N-channel MOSFET Transistor, 1.6 A, 60 V, 4-Pin SOT-223

Download ZXMS6003GTA Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
ZXMS6003GTA - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - ZXMS6003GTA-1
click to zoom
3D Models
ZXMS6003GTA - Diodes Incorporated  - 3D model - SOT223 (3-Pin) - ZXMS6003GTA-1
click to zoom

ZXMS6003GTA Details

  • Manufacturer Part Number:

    ZXMS6003GTA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-261AA

  • Package Description:

    TO-261AA, 4 PIN

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    550 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    1.6 A

  • Drain-source On Resistance-Max:

    0.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ZXMS6003GTA Frequently Asked Questions (FAQs)

  • A good PCB layout for the ZXMS6003GTA should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device. A minimum of 2oz copper thickness is recommended. Refer to the Diodes Incorporated application note AN-114 for more details.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source, and the enable pin (EN) to a logic-level signal. The output pin (VOUT) should be decoupled with a 10uF ceramic capacitor. Refer to the datasheet for specific voltage and current requirements.
  • The ZXMS6003GTA has a thermal shutdown feature that activates at 150°C. Ensure good airflow around the device, and consider using a heat sink or thermal interface material to reduce thermal resistance. The device can operate up to 125°C ambient temperature.
  • Yes, the ZXMS6003GTA is AEC-Q100 qualified and suitable for automotive and high-reliability applications. However, ensure that the device is used within the specified operating conditions and that the system design meets the required safety and reliability standards.
  • A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for input decoupling. The capacitor should be placed as close to the VIN pin as possible to minimize noise and ensure stable operation.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

ZXMS6003GTA Overview

Use the download button to access the ZXMS6003GTA schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like ZXMS6, or try a keyword search, such as Power Field-Effect Transistors

Parts related to ZXMS6003GTA

Showing 0 results

ZXMS6003GTA Alternates

Showing results

Image Part Number Model
Part Image ZXMS6003GTA Zetex / Diodes Inc

Power Field-Effect Transistor, 1.6A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA