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ZXMS6004DN8Q-13 - Diodes Incorporated

Description: 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

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ZXMS6004DN8Q-13 - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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ZXMS6004DN8Q-13 - Diodes Incorporated  - 3D model - Small Outline Packages - SO-8
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ZXMS6004DN8Q-13 Details

  • Manufacturer Part Number:

    ZXMS6004DN8Q-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.56 W

  • Pulsed Drain Current-Max (IDM):

    2.5 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ZXMS6004DN8Q-13 Frequently Asked Questions (FAQs)

  • A good PCB layout for the ZXMS6004DN8Q-13 should include a solid ground plane, wide power traces, and a thermal relief pattern under the device. This helps to reduce thermal resistance and ensures reliable operation.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source, and the enable pin (EN) to a logic-level signal. The output pin (VOUT) should be decoupled with a 10uF capacitor to ensure stability.
  • The ZXMS6004DN8Q-13 is rated for operation up to 85°C ambient temperature. However, it's recommended to derate the device's power dissipation above 70°C to ensure reliable operation.
  • While the ZXMS6004DN8Q-13 is a high-quality device, it's essential to consult with Diodes Incorporated's application engineers to ensure the device meets the specific requirements of your high-reliability or automotive application.
  • To prevent ESD damage, handle the device by the body or use an anti-static wrist strap. Ensure the PCB design includes ESD protection diodes and follow proper PCB assembly and handling procedures.

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ZXMS6004DN8Q-13 Overview

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