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ZXT12N50DXTA - Diodes Incorporated

Description: Diodes Inc ZXT12N50DXTA Dual NPN Bipolar Transistor, 3 A, 50 V, 8-Pin MSOP

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ZXT12N50DXTA - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - (MSOP-8)aaa
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ZXT12N50DXTA - Diodes Incorporated  - 3D model - Small Outline Packages - (MSOP-8)aaa
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ZXT12N50DXTA Details

  • Manufacturer Part Number:

    ZXT12N50DXTA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MSOP

  • Package Description:

    SUPERSOT, MSOP-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    50

  • JEDEC-95 Code:

    MO-187AA

  • JESD-30 Code:

    S-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    132 MHz

ZXT12N50DXTA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the ZXT12N50DXTA is -55°C to 150°C.
  • Yes, the ZXT12N50DXTA is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The recommended gate resistor value for the ZXT12N50DXTA is typically in the range of 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.
  • Yes, the ZXT12N50DXTA can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and the layout is designed to minimize current imbalance.
  • The maximum allowable power dissipation for the ZXT12N50DXTA is dependent on the thermal resistance of the package and the ambient temperature, but typically it's around 100 W.

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ZXT12N50DXTA Overview

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Part Image ZXT12N50DXTC Zetex / Diodes Inc

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MO-187AA

Part Image ZXT12N50DXTC Diodes Incorporated

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MO-187AA