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ZXTN2011GTA - Diodes Incorporated

Description: Diodes Inc ZXTN2011GTA NPN Bipolar Transistor, 6 A, 100 V SOT-223

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PCB Footprints
ZXTN2011GTA - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT223
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3D Models
ZXTN2011GTA - Diodes Incorporated  - 3D model - SOT223 (3-Pin) - SOT223
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ZXTN2011GTA Details

  • Manufacturer Part Number:

    ZXTN2011GTA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-261AA

  • Package Description:

    TO-261AA, 4 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    130 MHz

ZXTN2011GTA Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the ZXTN2011GTA is 2.7V to 5.5V.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 1uF and a maximum equivalent series resistance (ESR) of 1 ohm.
  • The maximum input voltage that the ZXTN2011GTA can withstand is 6.5V.
  • The output current capability of the ZXTN2011GTA can be calculated using the formula: Iout = (Vin - Vout) / Rds(on), where Vin is the input voltage, Vout is the output voltage, and Rds(on) is the on-state resistance of the internal MOSFET.
  • The thermal shutdown temperature of the ZXTN2011GTA is 150°C.

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ZXTN2011GTA Overview

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Part Image ZXTN2011GTC Diodes Incorporated

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin

Part Image ZXTN2011GTC Zetex / Diodes Inc

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin