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ZXTP2012GTA - Diodes Incorporated

Description: Bipolar Transistors - BJT 60V PNP Low Sat

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PCB Footprints
ZXTP2012GTA - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - 3-Pin SOT-223dffff
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3D Models
ZXTP2012GTA - Diodes Incorporated  - 3D model - SOT223 (3-Pin) - 3-Pin SOT-223dffff
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ZXTP2012GTA Details

  • Manufacturer Part Number:

    ZXTP2012GTA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-261AA

  • Package Description:

    SOT-223, 4 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5.5 A

  • Collector-Base Capacitance-Max:

    48 pF

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    3 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    120 MHz

  • VCEsat-Max:

    0.25 V

ZXTP2012GTA Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are suggested. Refer to the Diodes Incorporated application note for more details.
  • To ensure stable operation, it is recommended to decouple the input voltage with a 10uF capacitor and add a 1uF capacitor in parallel with the output capacitor to filter out noise and ripple.
  • The maximum allowed power dissipation for the ZXTP2012GTA is 1.5W. Ensure that the device is operated within the recommended operating conditions to prevent overheating and damage.
  • The ZXTP2012GTA is rated for operation up to 125°C. However, it is recommended to derate the power dissipation by 1.5mW/°C above 25°C to ensure reliable operation in high-temperature environments.
  • Handle the device with an ESD wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as adding ESD diodes or resistors to the input and output pins.

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ZXTP2012GTA Overview

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Part Image ZXTP2012GTC Diodes Incorporated

Small Signal Bipolar Transistor, 5.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA

Part Image ZXTP2012GTA Zetex / Diodes Inc

Power Bipolar Transistor, 5.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin

Part Image ZXTP2012GTC Zetex / Diodes Inc

Power Bipolar Transistor, 5.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin