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ZXTP25100BFHTA - Diodes Incorporated

Description: Bipolar (BJT) Transistor PNP 100 V 2 A 200MHz 1.25 W Surface Mount SOT-23-3

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ZXTP25100BFHTA - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23 (H=1.1mm)
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ZXTP25100BFHTA - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - SOT23 (H=1.1mm)
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ZXTP25100BFHTA Details

  • Manufacturer Part Number:

    ZXTP25100BFHTA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23

  • Package Description:

    SOT-23, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    4

  • Collector Current-Max (IC):

    2 A

  • Collector-Base Capacitance-Max:

    25 pF

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1.25 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • VCEsat-Max:

    0.295 V

ZXTP25100BFHTA Frequently Asked Questions (FAQs)

  • A good PCB layout for the ZXTP25100BFHTA should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2oz copper thickness is recommended.
  • To ensure proper biasing, the ZXTP25100BFHTA requires a stable input voltage (VIN) and a bypass capacitor (CBYP) connected between VIN and GND. The recommended biasing configuration is VIN = 5V, CBYP = 10uF, and RSET = 10kΩ.
  • The maximum allowed power dissipation for the ZXTP25100BFHTA is 1.5W. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • The ZXTP25100BFHTA is rated for operation up to 125°C. However, the device's performance and reliability may degrade at high temperatures. It's essential to consider the operating temperature and thermal management when designing with this device.
  • To troubleshoot issues with the ZXTP25100BFHTA, start by verifying the input voltage, output voltage, and biasing configuration. Check for proper PCB layout, decoupling, and thermal management. If issues persist, consult the datasheet and application notes or contact Diodes Incorporated's technical support.

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ZXTP25100BFHTA Overview

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Part Image ZXTP25100BFHTA Zetex / Diodes Inc

Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon