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ZXTP5401GTA - Diodes Incorporated

Description: Bipolar Transistors - BJT PNP 150V 2A

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PCB Footprints
ZXTP5401GTA - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT223 HEIGHT 1.8
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3D Models
ZXTP5401GTA - Diodes Incorporated  - 3D model - SOT223 (3-Pin) - SOT223 HEIGHT 1.8
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ZXTP5401GTA Details

  • Manufacturer Part Number:

    ZXTP5401GTA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-261AA

  • Package Description:

    TO-261AA, 4 PIN

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    150 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    50

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

ZXTP5401GTA Frequently Asked Questions (FAQs)

  • A good PCB layout for the ZXTP5401GTA should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2oz copper thickness is recommended.
  • To ensure stable operation with a varying input voltage, it is recommended to use a capacitor with a high capacitance value (e.g., 10uF) and a low ESR (Equivalent Series Resistance) in parallel with the input capacitor. Additionally, a voltage regulator or a voltage stabilizer can be used to regulate the input voltage.
  • The maximum allowable power dissipation for the ZXTP5401GTA is dependent on the ambient temperature and the thermal resistance of the device. According to the datasheet, the maximum power dissipation is 2.5W at an ambient temperature of 25°C. However, this value can be derated based on the actual operating conditions.
  • The ZXTP5401GTA is rated for operation up to 150°C junction temperature. However, the device's performance and reliability may degrade at high temperatures. It is recommended to derate the device's power dissipation and ensure proper heat sinking to maintain a safe operating temperature.
  • To protect the ZXTP5401GTA from electrical overstress (EOS), it is recommended to use a transient voltage suppressor (TVS) or a zener diode in parallel with the input capacitor. Additionally, a fuse or a current limiter can be used to limit the input current.

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ZXTP5401GTA Overview

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Part Image ZXTP5401GTA Zetex / Diodes Inc

Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin