Price & Stock for BSS138P,215

Newark

Mosfet, n Channel,60V,0.36A, sot23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:360Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Nexperia BSS138P,215

Newark

Mosfets; Transistor Polarity:N Channel; Continuous Drain Current Id:360Ma; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.9Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:350Mw; Transistor Rohs Compliant: Yes |Nexperia BSS138P,215

Future Electronics

BSS138P Series 60 V 1.6 Ohm 350 mW 0.72 nC N-Channel SMT TrenchMOS FET - SOT-23

Future Electronics

BSS138P Series 60 V 1.6 Ohm 350 mW 0.72 nC N-Channel SMT TrenchMOS FET - SOT-23

Bristol Electronics

Bristol Electronics

Quest Components

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.36A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB

Quest Components

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.36A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB

Quest Components

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.36A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB

Quest Components

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.36A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB

TME

Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB

Chip 1 Exchange

INSTOCK

Avnet Silica

Power MOSFET, N Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount (Alt: BSS138P,215)

Chip Stock

EBV Elektronik

Power MOSFET, N Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount (Alt: BSS138P,215)

New Advantage Corporation

BSS138P Series 60 V 1.6 Ohm 350 mW 0.72 nC N-Channel SMT TrenchMOS FET - SOT-23