Price & Stock for GT20N135SRA,S1E(S
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Newark
Igbt, 1.35V, 40A, To-247; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2V; Power Dissipation:312W; Collector Emitter Voltage Max:1.35Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:- Rohs Compliant: Yes |Toshiba GT20N135SRA, S1E(S
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY GT20N135SRA,S1E(S DISTI # 09AK4077Toshiba America Electronic Components Bulk 1 255 - 510 $2.07000
- 270 $2.12000
- 120 $2.47000
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Chip1Stop
Bipolar Transistor (BJT)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY GT20N135SRA,S1E(S DISTI # C1S751201632913Toshiba America Electronic Components Tube Compliant 20 - 10 $1.78000
- 1 $2.80000
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EBV Elektronik
IGBT, 40 A, 2 V, 312 W, 1.35 kV, TO-247, 3 Pins (Alt: GT20N135SRA,S1E(S)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY GT20N135SRA,S1E(S DISTI # GT20N135SRA,S1E(SToshiba America Electronic Components 30 25 Weeks, 0 Days Compliant EBV - 0 Buy Now Request or Build Model