Price & Stock for HGTG12N60A4D
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DigiKey
IGBT 600V 54A 167W TO247
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY HGTG12N60A4D DISTI # HGTG12N60A4D-NDonsemi Tube 0
TubeBuy Now Request or Build Model -
Avnet Americas
Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG12N60A4D)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY HGTG12N60A4D DISTI # HGTG12N60A4Donsemi Tube 140 4 Weeks, 0 Days Compliant 368 Partner Stock Request or Build Model -
Newark
Igbt Single Transistor, General Purpose, 54 A, 2.7 V, 167 W, 600 V, To-247, 3 Rohs Compliant: Yes |Onsemi HGTG12N60A4D
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY HGTG12N60A4D DISTI # 05M3502onsemi Bulk 1 0 - 1 $2.25000
Buy Now Request or Build Model -
Newark
Igbt, 600V,54A, To-247; Continuous Collector Current:54A; Collector Emitter Saturation Voltage:2V; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:-Rohs Compliant: Yes |Onsemi HGTG12N60A4D
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY HGTG12N60A4D DISTI # 58K1585onsemi Bulk 120 0 Buy Now Request or Build Model -
Rochester Electronics
600V, SMPS IGBT
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY HGTG12N60A4D DISTI #onsemi 1 Compliant 368 - 1000 $2.22000
- 500 $2.35000
- 100 $2.45000
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ComSIT USA
600V, SMPS N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY HGTG12N60A4D DISTI #Fairchild Semiconductor Corporation Not Compliant Stock EU - 18 Stock US - 0 Stock MX - 0 Stock CN - 0 Stock HK - 0 Download HGTG12N60A4D Model Download Datasheet