Price & Stock for NTH4L080N120SC1
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DigiKey
SICFET N-CH 1200V 29A TO247-4
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # 5556-NTH4L080N120SC1-NDonsemi Tube 1 400
Tube- 30 $5.97800
- 1 $8.51000
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Verical
Trans MOSFET N-CH SiC 1.2KV 50.4A 4-Pin(4+Tab) TO-247 Tube
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # 63311964Aptina Imaging 1 Americas - 348 - 1 $6.48800
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Avnet Americas
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L - Bulk (Alt: 91AH8492)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # 91AH8492onsemi Bulk 1 10 Weeks, 3 Days Not Compliant 63 Partner Stock - 100 $6.26000
- 50 $6.53000
- 25 $6.84000
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Avnet Americas
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L - Rail/Tube (Alt: NTH4L080N120SC1)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # NTH4L080N120SC1onsemi Tube 450 17 Weeks, 0 Days Compliant 117000 Factory Stock - 450 $5.35629
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Mouser Electronics
SiC MOSFETs SIC MOS TO247-4L 80MOHM 1200V
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # 863-NTH4L080N120SC1onsemi Compliant 373 - 1020 $5.83000
- 30 $5.97000
- 10 $7.97000
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Arrow Electronics
Trans MOSFET N-CH SiC 1.2KV 29A 4-Pin(4+Tab) TO-247 Tube
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # P40:2555_24093332onsemi 1 Europe - 900 - 1020 $5.53860
- 30 $5.58460
- 10 $7.45250
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Arrow Electronics
Trans MOSFET N-CH SiC 1.2KV 29A 4-Pin(4+Tab) TO-247 Tube
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # V99:2348_24261739onsemi 1 17 Weeks Americas - 30 - 30 $6.06900
- 10 $6.45000
- 1 $6.48800
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Newark
Sic Mosfet, N-Ch, 20V, 29A, To-247; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:4Pins; Rds(On) Test Voltage:20V; Power Dissipation:170W Rohs Compliant: Yes |Onsemi NTH4L080N120SC1
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # 91AH8492onsemi Bulk 1 Compliant 63 - 900 $6.21000
- 250 $6.22000
- 100 $6.26000
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Future Electronics
N-Channel 1200 V 29 A 170 W Through Hole Silicon Carbide MOSFET - TO-247-4L
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi Tube 30 17 Weeks Compliant 450Tube - 750 $5.28000
- 450 $5.32000
- 150 $5.36000
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Future Electronics
N-Channel 1200 V 29 A 170 W Through Hole Silicon Carbide MOSFET - TO-247-4L
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi Tube 1 17 Weeks Compliant 70Tube - 400 $5.28000
- 125 $5.37000
- 40 $5.41000
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Future Electronics
N-Channel 1200 V 29 A 170 W Through Hole Silicon Carbide MOSFET - TO-247-4L
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi Tube 1 17 Weeks Compliant 60Tube - 400 $5.28000
- 125 $5.37000
- 40 $5.41000
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Future Electronics
N-Channel 1200 V 29 A 170 W Through Hole Silicon Carbide MOSFET - TO-247-4L
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi Bulk 1 17 Weeks Compliant 16Bulk - 400 $5.28000
- 125 $5.37000
- 40 $5.41000
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Future Electronics
N-Channel 1200 V 29 A 170 W Through Hole Silicon Carbide MOSFET - TO-247-4L
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi Tube 450 17 Weeks Compliant 0Tube - 750 $5.28000
- 450 $5.32000
- 150 $5.36000
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Future Electronics
N-Channel 1200 V 29 A 170 W Through Hole Silicon Carbide MOSFET - TO-247-4L
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi Bulk 1 17 Weeks Compliant 0Bulk - 400 $5.28000
- 125 $5.37000
- 40 $5.41000
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Onlinecomponents.com
Transistor MOSFET N-Channel 1200V 50.4A 4-Pin TO-247 Tube
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi Compliant 0 - 450 $5.93000
- 338 $6.05000
- 225 $7.65000
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Rochester Electronics
NTH4L080N - Silicon Carbide MOSFET, N Channel, 1200 V, 80 m
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi 1 1070 Request or Build Model -
TME
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # NTH4L080N120SC1onsemi 1 10 - 30 $11.19000
- 10 $11.95000
- 3 $13.47000
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Richardson RFPD
SILICON CARBIDE MOSFETS
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # NTH4L080N120SC1onsemi 450 Compliant 0 - 450 $5.98000
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Avnet Asia
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L (Alt: NTH4L080N120SC1)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # NTH4L080N120SC1onsemi 450 17 Weeks, 0 Days Compliant 0 - 22500 $5.62635
- 11250 $5.76193
- 4500 $5.90420
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Avnet Silica
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L (Alt: NTH4L080N120SC1)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # NTH4L080N120SC1onsemi 30 18 Weeks, 0 Days Compliant Silica - 0 Buy Now Request or Build Model -
Chip-Germany GmbH
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #Not Compliant 4410 Request or Build Model -
EBV Elektronik
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L (Alt: NTH4L080N120SC1)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI # NTH4L080N120SC1onsemi 30 19 Weeks, 0 Days Compliant EBV - 240 Buy Now Request or Build Model -
New Advantage Corporation
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi 1 Compliant 516 - 516 $6.91000
- 30 $7.40000
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Wuhan P&S
1200V, 80m��,29A,N�\\Channel SiC MOSFET
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY NTH4L080N120SC1 DISTI #onsemi 1 770 - 1000 $8.07000
- 500 $8.78000
- 100 $10.65000
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