IRF9Z Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRF9Z32-003 International Rectifier	1	Power Field-Effect Transistor, 15A I(D), 50V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRF9Z32-003	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z14-029PBF International Rectifier	1	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF9Z14-029PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z30-010 International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRF9Z30-010	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z15 Samsung Semiconductor	1	Power Field-Effect Transistor, 4A I(D), 60V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	IRF9Z15	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRF9Z24 International Rectifier	1	Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF9Z24	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z14-001PBF International Rectifier	1	Power Field-Effect Transistor, 4.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRF9Z14-001PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z22 Samsung Semiconductor	1	Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	IRF9Z22	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z22-004PBF International Rectifier	1	Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRF9Z22-004PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z24N-024PBF Infineon Technologies AG	1	12A, 55V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET	IRF9Z24N-024PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z34STRR International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN	IRF9Z34STRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z34NL International Rectifier	1	Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN	IRF9Z34NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z30-012 Infineon Technologies AG	1	Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,	IRF9Z30-012	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z14-030 International Rectifier	1	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF9Z14-030	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z14-003PBF International Rectifier	1	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF9Z14-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z34N-031 Infineon Technologies AG	1	Power Field-Effect Transistor, 17A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,	IRF9Z34N-031	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRF9Z32-002 International Rectifier	1	Power Field-Effect Transistor, 15A I(D), 50V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRF9Z32-002	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z32-011 Infineon Technologies AG	1	Power Field-Effect Transistor, 15A I(D), 50V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,	IRF9Z32-011	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z34N-003PBF International Rectifier	1	Power Field-Effect Transistor, 17A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF9Z34N-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z34NLPBF International Rectifier	1	Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN	IRF9Z34NLPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z24N-029 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,	IRF9Z24N-029	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z14FPBF International Rectifier	1	Power Field-Effect Transistor, 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF9Z14FPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z34-002PBF International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF9Z34-002PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z24-018PBF International Rectifier	1	Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF9Z24-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z24N-003PBF Infineon Technologies AG	1	12A, 55V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET	IRF9Z24N-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF9Z14 Samsung Semiconductor	1	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	IRF9Z14	3D model not available Symbol and footprint not available 0	0 Build or Request
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