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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image
YR1B649KCC TE Connectivity
1 TE Connectivity R Series Axial Through Hole Fixed Resistor 649kΩ ±0.1% 0.25W ±15ppm/°C Resistors, Axial Diameter Horizontal Mounting YR1B649KCC 1 Download Model
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W3A4YC223MAT2A Kyocera AVX
1 Capacitor Arrays & Networks 16V 22nF 20% 0612 X7 R 4CAPS Other W3A4YC223MAT2A 1 Download Model
Part Image Part Image 1 Tantalum Capacitors - Solid SMD 1500uF 6.3volts 20% R case Conformal Other 592D158X06R3R2T20H 1 Download Model
Part Image Part Image 1 IHLP® Automotive Inductors, High Temperature (180 °C) Series Inductors Precision Moulded IHLP2020CZER1R5M11 1 Download Model
Part Image Part Image 1 RoHS 6/6 Green CR,0805,1/8W,1.78R,±1% Other CRG0805-R-1R78FT 1 Download Model
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R1RW0416DSB-0PR#D1 Renesas Electronics
0 The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare Small Outline Packages R1RW0416DSB-0PR#D1 1 Download Model
Part Image Part Image 1 IHLP® Automotive Inductors, High Temperature (180 °C) Series Inductors Precision Moulded IHLP2020CZER1R5M01. 1 Download Model
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R1RW0416DSB-0PR#D0 Renesas Electronics
0 The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare Small Outline Packages R1RW0416DSB-0PR#D0 1 Download Model
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R1RP0416DGE-2PI#B1 Renesas Electronics
1 SRAM Memory IC 4Mbit Parallel 12 ns 44-SOJ| Surface Mount ,-40°C ~ 85°C (TA) Other R1RP0416DGE-2PI#B1 1 Download Model
Part Image Part Image 1 1.5 µH Shielded Molded Inductor 10 A 12mOhm Max Nonstandard Other ASPI0630LR1R5M 1 Download Model
Part Image Part Image 1 150 nH Shielded Inductor 50 A 0.185mOhm Nonstandard Other FP1010R1-R150-R 1 Download Model
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R1RW0416DGE-2PR#B0 Renesas Electronics
1 The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare Other R1RW0416DGE-2PR#B0 1 Download Model
Part Image Part Image 1 Fixed Inductors 1uH 20% Inductors Precision Moulded IHLP4040DZER1R0M11 1 Download Model
Part Image Part Image 1 IHLP® Automotive Inductors, High Temperature (180 °C) Series Inductors Precision Moulded IHLP2020CZER1R0M5A 1 Download Model
Part Image Part Image 1 IHLP® Commercial Inductors, High Temperature (155 °C) Series Inductors Precision Moulded IHLP7575GZER1R0M51 1 Download Model
Part Image Part Image 1 High Power CR,0402,1/8W,1.54R,±1% Resistor Chip HPCR0402-R-1R54FT 1 Download Model
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R1RW0416DSB-2PI#S1 Renesas Electronics
0 The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. Small Outline Packages R1RW0416DSB-2PI#S1 1 Download Model
Part Image Part Image 1 IHLP® Automotive Inductors, High Temperature (180 °C) Series Inductors Precision Moulded IHLP2020CZER1R0M1A 1 Download Model
Part Image Part Image 1 High Power CR,0402,1/8W,1.65R,±1% Resistor Chip HPCR0402-R-1R65FT 1 Download Model
Part Image Part Image 1 High Power CR,0402,1/8W,1.43R,±1% Resistor Chip HPCR0402-R-1R43FT 1 Download Model
Part Image Part Image 1 IHLP® Automotive Inductors, High Temperature (180 °C) Series Inductors Precision Moulded IHLP2020CZER1R0M51 1 Download Model
Part Image Part Image 1 RoHS 6/6 Green CR,0805,1/8W,1R,±5% Other CRG0805-R-1R0JT 1 Download Model
Part Image Part Image 1 RoHS 6/6 Green CR,0805,1/8W,1.6R,±5% Other CRG0805-R-1R6JT 1 Download Model
Part Image Part Image 1 High Power CR,0402,1/8W,1.07R,±1% Resistor Chip HPCR0402-R-1R07FT 1 Download Model
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CRGH1206F71R5 TE Connectivity
1 Configuration Features: Number of Resistors 1 | Dimensions: Product Height .55 MM | Product Height .022 INCH | Product Width 1.55 MM | Product Length 3.1 MM | Product Width .061 INCH | Product Length .122 INCH | Electrical Characteristics: Resistance Class Up to 1kΩ | Passive Component Tolerance 1 PCT | Operating Voltage 200 V | Power Rating .5 WATT | Resistance Value 71.5 OHM | Packaging Features: Packaging Method Taped & Reeled | Product Type Features: Package Size Code 1206 | Element Type Thick Film | R Resistor Chip CRGH1206F71R5 1 Download Model
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