DRAMs||SRAMs||Other Memory ICs Footprint, Symbol and 3D Model search results

Showing 25 of 597251 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	70V3589S133DRGI8 Renesas Electronics	1	The 70V3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	Quad Flat Packages	70V3589S133DRGI8	3D model available Symbol and footprint available 3	1 Download Model
	R1LP5256ESP-5SI#S0 Renesas Electronics	1	The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32, 768-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LP5256E Series has realized higher density, higher performance and low power consumption. The R1LP5256E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 28-pin SOP and 28-pin TSOP.	Small Outline Packages	R1LP5256ESP-5SI#S0	3D model available Symbol and footprint available 3	1 Download Model
	7133LA25G Renesas Electronics	1	The 7133 high-speed 2K x 16 Dual-Port Static RAMs is designed to be used as a stand-alone 16-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7143 "SLAVE" Dual-Port in 32-bit-or-more word width systems. Low-power (LA) versions offer battery backup data retention capability, with each port typically consuming 200μW for a 2V battery. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7133LA25G	3D model available Symbol and footprint available 3	1 Download Model
	R1Q2A4436RBG-40IB0 Renesas Electronics	1	The R1Q2A4436RBG is a 4, 194, 304-word by 36-bit and the R1Q2A4418RBG is a 8, 388, 608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed,	BGA	R1Q2A4436RBG-40IB0	3D model available Symbol and footprint available 3	1 Download Model

	71V3556SA100BGG Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA100BGG	3D model available Symbol and footprint available 3	1 Download Model
	70T3319S166BFG Renesas Electronics	1	The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3319S166BFG	3D model available Symbol and footprint available 3	1 Download Model
	70V3389S4BC Renesas Electronics	1	The 70V3389 is a high-speed 64K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3389 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3389S4BC	3D model available Symbol and footprint available 3	1 Download Model
	70V35L15PFG Renesas Electronics	1	The 70V35 is a high-speed 8K x 18 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V35L15PFG	3D model available Symbol and footprint available 3	1 Download Model
	71V3559S85BG Renesas Electronics	1	The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).	BGA	71V3559S85BG	3D model available Symbol and footprint available 3	1 Download Model
	6116SA90TDB Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	6116SA90TDB	3D model not available Symbol and footprint available 2	1 Download Model
	R1LV0416DSB-5SI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1LV0416DSB-5SI#B0	3D model available Symbol and footprint available 3	1 Download Model
	70261L15PFG8 Renesas Electronics	1	The 70261 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70261L15PFG8	3D model available Symbol and footprint available 3	1 Download Model
	71V65703S85PFGI Renesas Electronics	1	The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V65703S85PFGI	3D model available Symbol and footprint available 3	1 Download Model
	71256SA20PZGI8 Renesas Electronics	1	The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71256SA20PZGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V67803S166PFGI8 Renesas Electronics	1	The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V67803S166PFGI8	3D model available Symbol and footprint available 3	1 Download Model

	71T75602S150BGI8 Renesas Electronics	1	The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.	BGA	71T75602S150BGI8	3D model available Symbol and footprint available 3	1 Download Model
	7133LA20PFG8 Renesas Electronics	1	The 7133 high-speed 2K x 16 Dual-Port Static RAMs is designed to be used as a stand-alone 16-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7143 "SLAVE" Dual-Port in 32-bit-or-more word width systems. Low-power (LA) versions offer battery backup data retention capability, with each port typically consuming 200μW for a 2V battery. Military grade product in compliance with MIL-PRF-38535 QML is available.	Quad Flat Packages	7133LA20PFG8	3D model available Symbol and footprint available 3	1 Download Model
	71V2556SA100BG8 Renesas Electronics	1	The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM.	BGA	71V2556SA100BG8	3D model available Symbol and footprint available 3	1 Download Model
	70V631S12BFGI Renesas Electronics	1	The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	70V631S12BFGI	3D model available Symbol and footprint available 3	1 Download Model
	70V3569S4BC Renesas Electronics	1	The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3569S4BC	3D model available Symbol and footprint available 3	1 Download Model
	70V3579S4BF8 Renesas Electronics	1	The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3579S4BF8	3D model available Symbol and footprint available 3	1 Download Model
	70V9169L6PFG Renesas Electronics	1	The 70V9169 is a high-speed 16K x 9 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V9169L6PFG	3D model available Symbol and footprint available 3	1 Download Model
	HM1-65642/883 Renesas Electronics	1	The HM-65642/883 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642/883 is ideally suited for use in microprocessor based systems. In particular, interfacing with the Renesas 80C86 and 80C88 microprocessors is simplified by the convenient output enable (G) input. The HM-65642/883 is a full CMOS RAM which utilizes an arra	Ceramic Dual-In-Line Packages	HM1-65642/883	3D model not available Symbol and footprint available 2	1 Download Model
	70V659S12DRGI Renesas Electronics	1	The 70V659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	Quad Flat Packages	70V659S12DRGI	3D model available Symbol and footprint available 3	1 Download Model
	71T75902S85BGG Renesas Electronics	1	The 71T75902 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround.	BGA	71T75902S85BGG	3D model available Symbol and footprint available 3	1 Download Model
20 21 22 23 24 25 26 27 28

Can't find what you're looking for? Request this part

DRAMs||SRAMs||Other Memory ICs Model Download Search Results

Popular SRAMs