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ST7FSCR1R4T1
STMicroelectronics
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1 | 8-bit low-power, full-speed USB MCU with 16-Kbyte Flash, 768-byte RAM, smartcard interface and timer | Quad Flat Packages | ST7FSCR1R4T1 |
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FP0805R1-R03-R
Eaton
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1 | 32 nH Unshielded Drum Core, Wirewound Inductor 65 A 0.17mOhm Nonstandard | Inductors Precision Moulded | FP0805R1-R03-R |
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CRG0805-R-1R91FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.91R,±1% | Other | CRG0805-R-1R91FT |
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R1RW0416DSB-2PR#D0
Renesas Electronics
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1 | The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare | Small Outline Packages | R1RW0416DSB-2PR#D0 |
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IHLP2020CZER1R5M01
Vishay
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1 | Vishay IHLP2020CZ-01 Series Shielded Wire-wound SMD Inductor 1.5 μH ±20% 7.2A Idc | Inductors Precision Moulded | IHLP2020CZER1R5M01 |
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CRG0805-R-1R74FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.74R,±1% | Other | CRG0805-R-1R74FT |
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R1RW0408DGE-2LR#B1
Renesas Electronics
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1 | SRAM SRAM 4MB FAST X8 3V SOJ 12NS 0TO70C |SMD/SMT ,IC SRAM 4MBIT PARALLEL 36SOJ |+ 70C | Other | R1RW0408DGE-2LR#B1 |
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1 | Inductors for decoupling circuits, Soft termination, KLZ-HR series (for automotive) | Inductors Chip | KLZ2012MHR1R0HTD25 |
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IHLP4040DZER1R5M01
Vishay
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1 | Fixed Inductors 1.5uH 20% | Inductors Precision Moulded | IHLP4040DZER1R5M01 |
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HPCR0402-R-1R87FT
Venkel
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1 | High Power CR,0402,1/8W,1.87R,±1% | Resistor Chip | HPCR0402-R-1R87FT |
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CRG0805-R-1R10FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.1R,±1% | Other | CRG0805-R-1R10FT |
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IHHP1008ABER1R5M01
Vishay
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1 | Vishay IHHP-1008AB-01 Series Type 1008 Shielded Wire-wound SMD Inductor 1.5 µH 2.9A Idc | Inductors Precision Moulded | IHHP1008ABER1R5M01 |
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IHLP2020CZER1R0M01.
Vishay
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1 | IHLP® Automotive Inductors, High Temperature (180 °C) Series | Inductors Precision Moulded | IHLP2020CZER1R0M01. |
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R1RW0416DSB-0PI#S1
Renesas Electronics
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0 | The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. | Small Outline Packages | R1RW0416DSB-0PI#S1 |
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R1RW0416DSB-2PI#D1
Renesas Electronics
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1 | The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. | Small Outline Packages | R1RW0416DSB-2PI#D1 |
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IHLP2020CZER1R0M11.
Vishay
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1 | IHLP® Automotive Inductors, High Temperature (180 °C) Series | Inductors Precision Moulded | IHLP2020CZER1R0M11. |
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IHLP2020CZER1R5M8A
Vishay
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1 | IHLP® Automotive Inductors, High Temperature (180 °C) Series | Inductors Precision Moulded | IHLP2020CZER1R5M8A |
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SD53-1R1-R
Eaton
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1 | 1.1 µH Shielded Drum Core, Wirewound Inductor 3.25 A 20mOhm Max Nonstandard -40 °C to +125 °C | Other | SD53-1R1-R |
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FP0707R1-R110-R
Eaton
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1 | Eaton FP0707R inductor, 0.11 uH, 45 A Ir | Inductor Moulded | FP0707R1-R110-R |
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HPCR0402-R-1R18FT
Venkel
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1 | High Power CR,0402,1/8W,1.18R,±1% | Resistor Chip | HPCR0402-R-1R18FT |
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R1RP0416DSB-2PR#D0
Renesas Electronics
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0 | The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. | Small Outline Packages | R1RP0416DSB-2PR#D0 |
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CRG0805-R-1R00FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1R,±1% | Other | CRG0805-R-1R00FT |
3
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R1RW0416DSB-2PR#D1
Renesas Electronics
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1 | The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare | Small Outline Packages | R1RW0416DSB-2PR#D1 |
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R1RW0416DSB-0PR#S1
Renesas Electronics
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0 | The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare | Small Outline Packages | R1RW0416DSB-0PR#S1 |
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NTCLE350E4103JLB0
Vishay
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1 | NTC (Negative Temperature Coefficient) Thermistors R 10Kohm 5% B 3435K 1% | Other | NTCLE350E4103JLB0 |
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