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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	JMSL0605AGDQ Jiangsu JieJie Microelectronics Co Ltd	1	60V dual N-channel power MOSFET with 4.4 mΩ typical RDS(ON) at VGS = 10V, 5.6 mΩ at VGS = 4.5V, 61A continuous drain current, and 33 nC total gate charge, housed in a PDFN5x6-8L-D package.	JMSL0605AGDQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0606PU Jiangsu JieJie Microelectronics Co Ltd	1	60V 69A N-Channel Power MOSFET in PDFN3x3-8L package with 3.9mΩ typical RDS(ON) at 10V VGS, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0606PU	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0315AK Jiangsu JieJie Microelectronics Co Ltd	1	30V 41A N-channel Power MOSFET in TO-252-3L package with 9.5 mΩ RDS(ON) at 10V VGS, low gate charge, and 100% UIS and Rg tested for reliable switching applications.	JMSL0315AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0606PG Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in PDFN5x6-8L package with 3.2 mΩ RDS(ON) at 10V VGS, 114A continuous drain current, low gate charge, and 100% UIS tested for high reliability in power management and motor driving applications.	JMSL0606PG	3D model not available Symbol and footprint not available 0	0 Build or Request

	JMSL0606AG Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-Ch Power MOSFET in PDFN5x6-8L package with 4.0 mΩ RDS(ON) at 10V VGS, 97 A continuous drain current, low gate charge, and 100% UIS tested for power management and motor driving applications.	JMSL0606AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0609AK Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in TO-252-3L package with 7.4 mΩ RDS(ON) at 10V VGS, 56A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management and motor driving applications.	JMSL0609AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0613APD Jiangsu JieJie Microelectronics Co Ltd	1	60V dual N-channel power MOSFET in SOP-8L package with 10.5 mΩ typical RDS(ON) at VGS = 10V, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0613APD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0406AP Jiangsu JieJie Microelectronics Co Ltd	1	40V N-channel Power MOSFET in SOP-8L package with 4.8 mΩ typical RDS(ON) at 10V VGS, 17.8A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0406AP	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0307AV Jiangsu JieJie Microelectronics Co Ltd	1	30V N-channel Power MOSFET in U-DFN2020-6L package with 3.7mΩ typical RDS(ON) at 10V VGS, 29A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0307AV	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0615AGDQ Jiangsu JieJie Microelectronics Co Ltd	1	Dual N-Ch Power MOSFET with 60 V drain-source voltage, 33 A continuous drain current, 10.5 mΩ typical RDS(ON) at 10 V VGS, and 13.5 mΩ at 4.5 V VGS in a PDFN5x6-8L-D package.	JMSL0615AGDQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0612AU Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-channel Power MOSFET in PDFN3x3-8L package with 10.0 mΩ typical RDS(ON) at 10 V VGS, 38 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0612AU	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0302AK Jiangsu JieJie Microelectronics Co Ltd	1	30V N-channel Power MOSFET in TO-252-3L package with 1.7mΩ RDS(ON) at VGS = 10V, 161A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0302AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0612AGQ Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-channel Power MOSFET in PDFN5x6-8L package with 9.5 mΩ RDS(ON) at 10 V VGS, 52 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications.	JMSL0612AGQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0620AUE Jiangsu JieJie Microelectronics Co Ltd	1	60V 24A N-channel Power MOSFET in PDFN3x3-8L package with 16mΩ typical RDS(ON) at VGS = 10V, low gate charge, and 1.1kV HBM ESD protection.	JMSL0620AUE	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0602AGQ Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET with 1.8 mΩ typical RDS(ON) at VGS = 10V, 2.4 mΩ at VGS = 4.5V, 172A continuous drain current, and 48 nC total gate charge, housed in a PDFN5x6-8L package.	JMSL0602AGQ	3D model not available Symbol and footprint not available 0	0 Build or Request

	JMSL0301AGND Jiangsu JieJie Microelectronics Co Ltd	1	30V Dual Asymmetric N-Ch Power MOSFET in DFN5060-8L-B package with RDS(ON) of 3.4 mΩ and 0.90 mΩ, continuous drain current of 64A and 173A, and thermal resistance RθJA of 35°C/W and 45°C/W.	JMSL0301AGND	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0608PPD Jiangsu JieJie Microelectronics Co Ltd	1	60V, 50A, 9mΩ N-channel Power SGT MOSFET in SOP-8L package with low gate charge, excellent RDS(ON), and 100% UIS tested for power management and load switch applications.	JMSL0608PPD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0615AGD Jiangsu JieJie Microelectronics Co Ltd	1	60 V dual N-channel power MOSFET in PDFN5x6-8L-D package with 10.5 mΩ typical RDS(ON) at 10 V VGS, 31 A continuous drain current, and low gate charge for power management applications.	JMSL0615AGD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0605AGD Jiangsu JieJie Microelectronics Co Ltd	1	60 V dual N-channel power MOSFET with 4.4 mΩ typical RDS(ON) at 10 V VGS, available in PDFN5x6-8L-D package, suitable for power management, motor driving, and switching applications.	JMSL0605AGD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0608PU Jiangsu JieJie Microelectronics Co Ltd	1	60V, 47A, 8.2mΩ N-channel Power Trench MOSFET in PDFN3X3-8L package with low gate charge, 100% UIS and ΔVds tested, suitable for load switch, PWM, and power management applications.	JMSL0608PU	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0608PP Jiangsu JieJie Microelectronics Co Ltd	1	60V, 13A, 9.4mΩ N-channel Power SGT MOSFET in SOP-8 package with low gate charge, excellent RDS(ON), and 100% UIS tested, suitable for load switch, PWM, and power management applications.	JMSL0608PP	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0606AU Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET with 52A continuous drain current, 5.0mΩ typical RDS(ON) at VGS = 10V, 31nC gate charge, in a PDFN3x3-8L package, suitable for power management and switching applications.	JMSL0606AU	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0315ARD Jiangsu JieJie Microelectronics Co Ltd	1	30V dual N-channel power MOSFET in W-DFN3030-8L package with 6.5 mΩ typical RDS(ON) at VGS = 10V, low gate charge, and 37A continuous drain current capability.	JMSL0315ARD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0610AGDQ Jiangsu JieJie Microelectronics Co Ltd	1	60 V dual N-channel power MOSFET in PDFN5x6-8L-D package with 8.5 mΩ typical RDS(ON) at 10 V VGS, 38 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications.	JMSL0610AGDQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0620AGDE Jiangsu JieJie Microelectronics Co Ltd	1	60 V dual N-channel power MOSFET in PDFN5x6-8L-D package with typical RDS(ON) of 18 mΩ at VGS = 10 V, 25 mΩ at VGS = 4.5 V, and maximum continuous drain current of 23 A at 25°C.	JMSL0620AGDE	3D model not available Symbol and footprint not available 0	0 Build or Request
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