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SI4482DY Vishay
1 MOSFET 100V 4.6A 2.5W Small Outline Packages SI4482DY 1 Download Model
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SI4482DY Temic Semiconductors
1 Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SI4482DY 0 Build or Request
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SI4482DY-T1-E3 Vishay Intertechnologies
1 Power Field-Effect Transistor, 4.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET SI4482DY-T1-E3 0 Build or Request
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SI4482DY-T1 Vishay Siliconix
1 Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SI4482DY-T1 0 Build or Request
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SI4482DY-T1 Vishay Intertechnologies
1 Power Field-Effect Transistor, 4.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET SI4482DY-T1 0 Build or Request
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SI4482DY Vishay Siliconix
1 Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SI4482DY 0 Build or Request
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SI4482DY-T1-E3 Vishay Siliconix
1 Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SI4482DY-T1-E3 0 Build or Request
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SI4482DY VBsemi Electronics Co Ltd
1 N-Channel 100 V MOSFET in SO-8 package with 0.040 ohm RDS(on) at 10 V VGS, 6.4 A continuous drain current, 23 nC typical gate charge, and RoHS compliant, halogen-free construction. SI4482DY 0 Build or Request
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