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UPD48576236F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576236F1-E24-DW1-A 1 Download Model
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UPD48576218F1-E18-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576218F1-E18-DW1-A 1 Download Model
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UPD48576209F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576209F1-E24-DW1-A 1 Download Model
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UPD48576236F1-E18-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576236F1-E18-DW1-A 1 Download Model
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UPD48576218F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576218F1-E24-DW1-A 1 Download Model
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UPD482234G5M-80L Renesas Electronics Corporation
1 Video DRAM, 256KX8, CMOS, PDSO40 UPD482234G5M-80L 0 Build or Request
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UPD488448FB-C80-45-DQ2 Elpida Memory Inc
1 Rambus DRAM, 8MX16, 45ns, MOS, PBGA62 UPD488448FB-C80-45-DQ2 0 Build or Request
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UPD488488FB-C71-45-DP2 Renesas Electronics Corporation
1 Rambus DRAM, 8MX18, CMOS, PBGA62 UPD488488FB-C71-45-DP2 0 Build or Request
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UPD482445G5-60 Renesas Electronics Corporation
1 Memory Circuit, 256KX16, CMOS, PDSO70 UPD482445G5-60 0 Build or Request
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UPD482234G5-70 Renesas Electronics Corporation
1 Memory Circuit, 256KX8, CMOS, PDSO40 UPD482234G5-70 0 Build or Request
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UPD488448FB-C71-45-DQ2 Elpida Memory Inc
1 Rambus DRAM, 8MX16, 45ns, MOS, PBGA62 UPD488448FB-C71-45-DQ2 0 Build or Request
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UPD485506G5-25-7JF-A NEC Electronics Group
1 FIFO, 5KX16, 18ns, Synchronous, CMOS, PDSO44 UPD485506G5-25-7JF-A 0 Build or Request
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UPD488170LVN-A50-9 Renesas Electronics Corporation
1 Rambus DRAM, 2MX9, CMOS UPD488170LVN-A50-9 0 Build or Request
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UPD482234VF-80 Renesas Electronics Corporation
1 Memory Circuit, 256KX8, CMOS, PZIP40 UPD482234VF-80 0 Build or Request
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UPD482235LE-80 NEC Electronics America Inc
1 Video DRAM, 256KX8, 80ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 UPD482235LE-80 0 Build or Request
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UPD482445G5-70-7JG Elpida Memory Inc
1 Video DRAM, 256KX16, 70ns, CMOS, PDSO68 UPD482445G5-70-7JG 0 Build or Request
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UPD488170VN-A50-9 Renesas Electronics Corporation
1 Rambus DRAM, 2MX9, CMOS UPD488170VN-A50-9 0 Build or Request
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UPD48576236FF-E33-DW1 Renesas Electronics Corporation
1 DDR1 DRAM, 16MX36, 0.35ns, CMOS, PBGA144 UPD48576236FF-E33-DW1 0 Build or Request
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UPD482235G5M-70L Renesas Electronics Corporation
1 Video DRAM, 256KX8, CMOS, PDSO40 UPD482235G5M-70L 0 Build or Request
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UPD4811650GF-A80-9BT NEC Electronics Group
1 Synchronous Graphics RAM, 512KX32, 6.5ns, CMOS, PQFP100 UPD4811650GF-A80-9BT 0 Build or Request
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UPD48576236FF-E33-DW1-A Renesas Electronics Corporation
1 DDR1 DRAM, 16MX36, 0.35ns, CMOS, PBGA144 UPD48576236FF-E33-DW1-A 0 Build or Request
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UPD485506G5-25-7JF Renesas Electronics Corporation
1 FIFO, 5KX16, 18ns, Synchronous, CMOS, PDSO44 UPD485506G5-25-7JF 0 Build or Request
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UPD488385-C80-45BF1 Renesas Electronics Corporation
1 Rambus DRAM, 4MX18, CMOS, PBGA74 UPD488385-C80-45BF1 0 Build or Request
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UPD482445LGW-60 Renesas Electronics Corporation
1 Memory Circuit, 256KX16, CMOS, PDSO64 UPD482445LGW-60 0 Build or Request
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UPD488385-C80-40BF1 Renesas Electronics Corporation
1 Rambus DRAM, 4MX18, CMOS, PBGA74 UPD488385-C80-40BF1 0 Build or Request
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