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Image Part Number D.S Description Package Category Prices / Stock Model Action
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M48Z512AV-85PM1 STMicroelectronics
1 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM Dual-In-Line Sockets M48Z512AV-85PM1 1 Download Model
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IS64WV51216EDBLL-10CTLA3 Integrated Silicon Solution Inc.
1 SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp Small Outline Packages IS64WV51216EDBLL-10CTLA3 1 Download Model
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AS7C31024B-10TCN Alliance Memory
1 SRAM SRAM, 1Mb, 128K x 8, 3.3V, 32pin TSOP I, 10ns, Commercial Temp - Tray Small Outline Packages AS7C31024B-10TCN 1 Download Model
Part Image Part Image 1 SRAM Chip Async Single 3V 16M-bit 2M/1M x 8/16-bit 45ns Automotive 48-Pin TSOP-I Tray Small Outline Packages CY62167EV30LL-45ZXA 1 Download Model
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IS61WV2568EDBLL-10TLI Integrated Silicon Solution Inc.
1 SRAM 2Mb (256K x 8) 10ns Async SRAM Small Outline Packages IS61WV2568EDBLL-10TLI 1 Download Model
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IS66WVH16M8DBLL-166B1LI Integrated Silicon Solution Inc.
1 DRAM 128Mb, HyperRAM, 16Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS BGA IS66WVH16M8DBLL-166B1LI 1 Download Model
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IS61LV51216-10TI Integrated Silicon Solution Inc.
1 SRAM 8Mb 512Kx16 10ns 3.3v Small Outline Packages IS61LV51216-10TI 1 Download Model
Part Image Part Image 1 NVRAM 256Kb 3V 40Mhz 32K x 8 SPI nvSRAM Small Outline Packages CY14B256PA-SFXI 1 Download Model
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AS6C8008-55BIN Alliance Memory
1 SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM BGA AS6C8008-55BIN 1 Download Model
Part Image Part Image 1 DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 84MHz, RBX, HS, 1.8V, Ind. Temp., SOP8 Small Outline Packages APS6404L-SQRH-SN 1 Download Model
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AS7C164A-15PCN Alliance Memory
1 SRAM SRAM, 64K, 8k x 8, 5v, 28pin Skinny P-DIP, 15ns, Commercial Temp - Tube Dual-In-Line Packages AS7C164A-15PCN 1 Download Model
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R1LP0408CSP-5SI Renesas Electronics
1 RENESAS - R1LP0408CSP-5SI - SRAM, 4 Mbit, 512K x 8bit, 4.5V to 5.5V, SOP, 32 Pins, 55 ns Small Outline Packages R1LP0408CSP-5SI 1 Download Model
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IS66WVE4M16TBLL-70BLI-TR Integrated Silicon Solution Inc.
1 PSRAM Async Single Port 64M-bit 4M x 16 70ns 48-Pin TFBGA BGA IS66WVE4M16TBLL-70BLI-TR 1 Download Model
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70T3599S133BC Renesas Electronics
1 The 70T3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. BGA 70T3599S133BC 1 Download Model
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71124S15YGI8 Renesas Electronics
1 The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71124S15YGI8 1 Download Model
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5962-8861011ZA Renesas Electronics
1 The 5962-88610 (IDT 7133/43) is a high-speed 2K x 16 Dual-Port Static RAMs. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit-or-wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Military grade product in compliance with MIL-PRF-38535 QML. Other 5962-8861011ZA 1 Download Model
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71V3556SA100BGGI8 Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA100BGGI8 1 Download Model
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71V016SA12YG8 Renesas Electronics
1 The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71V016SA12YG8 1 Download Model
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70T633S12BCI Renesas Electronics
1 The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. BGA 70T633S12BCI 1 Download Model
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71V3556SA133BQG Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA133BQG 1 Download Model
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70T651S12BCI8 Renesas Electronics
1 The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. BGA 70T651S12BCI8 1 Download Model
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71V3577S85BQG Renesas Electronics
1 The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. BGA 71V3577S85BQG 1 Download Model
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R1Q4A7218ABB-33IB1 Renesas Electronics
1 The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low BGA R1Q4A7218ABB-33IB1 1 Download Model
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71T75602S166PFG8 Renesas Electronics
1 The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers. Quad Flat Packages 71T75602S166PFG8 1 Download Model
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7134LA20PDG Renesas Electronics
1 The 7134 is a high-speed 4K x 8 Dual-Port Static RAM designed to be used in systems where on-chip hardware port arbitration is not needed. This part lends itself to those systems which cannot tolerate wait states or are designed to be able to externally arbitrate or withstand contention when both sides simultaneously access the same Dual-Port RAM location. An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade prod Dual-In-Line Packages 7134LA20PDG 1 Download Model
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