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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	70V24L15PFG Renesas Electronics	1	The 70V24 is a high-speed 4K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or wider memory system applications resulting in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V24L15PFG	3D model available Symbol and footprint available 3	1 Download Model
	71256S70DB Renesas Electronics	1	The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	71256S70DB	3D model not available Symbol and footprint available 2	1 Download Model
	71V3577S75BQ8 Renesas Electronics	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V3577S75BQ8	3D model available Symbol and footprint available 3	1 Download Model
	70V3599S133BFI8 Renesas Electronics	1	The 70V3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3599S133BFI8	3D model available Symbol and footprint available 3	1 Download Model

	71V65803S133PFGI8 Renesas Electronics	1	The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V65803S133PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V65703S85BQG8 Renesas Electronics	1	The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V65703S85BQG8	3D model available Symbol and footprint available 3	1 Download Model
	6116SA25TDB Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	6116SA25TDB	3D model not available Symbol and footprint available 2	1 Download Model
	5962-8687508XA Renesas Electronics	1	The 5962-86875 (IDT 7130/40) is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with	Ceramic Dual-In-Line Packages	5962-8687508XA	3D model not available Symbol and footprint available 2	1 Download Model
	70V3379S4BCG Renesas Electronics	1	The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3379S4BCG	3D model available Symbol and footprint available 3	1 Download Model
	5962-8866204NA Renesas Electronics	1	The 5962-88662 (71256 SRAM) is organized as 32K x 8. This part offers a reduced power standby mode for significant system level power and cooling savings. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Ceramic Dual-In-Line Packages	5962-8866204NA	3D model not available Symbol and footprint available 2	1 Download Model
	7006L55G Renesas Electronics	1	The 7006 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7006L55G	3D model available Symbol and footprint available 3	1 Download Model
	70T3399S200BC8 Renesas Electronics	1	The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3399S200BC8	3D model available Symbol and footprint available 3	1 Download Model
	71256L25DB Renesas Electronics	1	The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	71256L25DB	3D model not available Symbol and footprint available 2	1 Download Model
	5962-8687504XA Renesas Electronics	1	The 5962-86875 (IDT 7130/40) is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with	Ceramic Dual-In-Line Packages	5962-8687504XA	3D model not available Symbol and footprint available 2	1 Download Model
	R1Q2A4418RBG-40IB0 Renesas Electronics	1	The R1Q2A4436RBG is a 4, 194, 304-word by 36-bit and the R1Q2A4418RBG is a 8, 388, 608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed,	BGA	R1Q2A4418RBG-40IB0	3D model available Symbol and footprint available 3	1 Download Model

	71256L100TDB Renesas Electronics	1	The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	71256L100TDB	3D model not available Symbol and footprint available 2	1 Download Model
	71V3557S85BG8 Renesas Electronics	1	The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).	BGA	71V3557S85BG8	3D model available Symbol and footprint available 3	1 Download Model
	71T75602S133PFG Renesas Electronics	1	The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.	Quad Flat Packages	71T75602S133PFG	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA166BQ8 Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA166BQ8	3D model available Symbol and footprint available 3	1 Download Model
	7130LA20PFG Renesas Electronics	1	The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Quad Flat Packages	7130LA20PFG	3D model available Symbol and footprint available 3	1 Download Model
	71T75802S150PFG Renesas Electronics	1	The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers.	Quad Flat Packages	71T75802S150PFG	3D model available Symbol and footprint available 3	1 Download Model
	71V416L15BEI Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	BGA	71V416L15BEI	3D model available Symbol and footprint available 3	1 Download Model
	5962-8700213ZA Renesas Electronics	1	The 5962-87002 (IDT 7132/42) is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with M	Ceramic Dual-In-Line Packages	5962-8700213ZA	3D model not available Symbol and footprint available 2	1 Download Model
	70T3599S166BF Renesas Electronics	1	The 70T3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3599S166BF	3D model available Symbol and footprint available 3	1 Download Model
	70V631S15BC Renesas Electronics	1	The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	70V631S15BC	3D model available Symbol and footprint available 3	1 Download Model
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