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M48Z512AV-85PM1
STMicroelectronics
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1 | 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM | Dual-In-Line Sockets | M48Z512AV-85PM1 |
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IS64WV51216EDBLL-10CTLA3
Integrated Silicon Solution Inc.
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1 | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp | Small Outline Packages | IS64WV51216EDBLL-10CTLA3 |
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AS7C31024B-10TCN
Alliance Memory
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1 | SRAM SRAM, 1Mb, 128K x 8, 3.3V, 32pin TSOP I, 10ns, Commercial Temp - Tray | Small Outline Packages | AS7C31024B-10TCN |
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CY62167EV30LL-45ZXA
Infineon
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1 | SRAM Chip Async Single 3V 16M-bit 2M/1M x 8/16-bit 45ns Automotive 48-Pin TSOP-I Tray | Small Outline Packages | CY62167EV30LL-45ZXA |
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IS61WV2568EDBLL-10TLI
Integrated Silicon Solution Inc.
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1 | SRAM 2Mb (256K x 8) 10ns Async SRAM | Small Outline Packages | IS61WV2568EDBLL-10TLI |
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IS66WVH16M8DBLL-166B1LI
Integrated Silicon Solution Inc.
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1 | DRAM 128Mb, HyperRAM, 16Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS | BGA | IS66WVH16M8DBLL-166B1LI |
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IS61LV51216-10TI
Integrated Silicon Solution Inc.
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1 | SRAM 8Mb 512Kx16 10ns 3.3v | Small Outline Packages | IS61LV51216-10TI |
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CY14B256PA-SFXI
Infineon
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1 | NVRAM 256Kb 3V 40Mhz 32K x 8 SPI nvSRAM | Small Outline Packages | CY14B256PA-SFXI |
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AS6C8008-55BIN
Alliance Memory
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1 | SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM | BGA | AS6C8008-55BIN |
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APS6404L-SQRH-SN
AP Memory
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1 | DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 84MHz, RBX, HS, 1.8V, Ind. Temp., SOP8 | Small Outline Packages | APS6404L-SQRH-SN |
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AS7C164A-15PCN
Alliance Memory
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1 | SRAM SRAM, 64K, 8k x 8, 5v, 28pin Skinny P-DIP, 15ns, Commercial Temp - Tube | Dual-In-Line Packages | AS7C164A-15PCN |
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R1LP0408CSP-5SI
Renesas Electronics
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1 | RENESAS - R1LP0408CSP-5SI - SRAM, 4 Mbit, 512K x 8bit, 4.5V to 5.5V, SOP, 32 Pins, 55 ns | Small Outline Packages | R1LP0408CSP-5SI |
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IS66WVE4M16TBLL-70BLI-TR
Integrated Silicon Solution Inc.
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1 | PSRAM Async Single Port 64M-bit 4M x 16 70ns 48-Pin TFBGA | BGA | IS66WVE4M16TBLL-70BLI-TR |
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70T3599S133BC
Renesas Electronics
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1 | The 70T3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3599S133BC |
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71124S15YGI8
Renesas Electronics
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1 | The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71124S15YGI8 |
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5962-8861011ZA
Renesas Electronics
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1 | The 5962-88610 (IDT 7133/43) is a high-speed 2K x 16 Dual-Port Static RAMs. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit-or-wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Military grade product in compliance with MIL-PRF-38535 QML. | Other | 5962-8861011ZA |
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71V3556SA100BGGI8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BGGI8 |
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71V016SA12YG8
Renesas Electronics
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1 | The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71V016SA12YG8 |
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70T633S12BCI
Renesas Electronics
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1 | The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T633S12BCI |
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71V3556SA133BQG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA133BQG |
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70T651S12BCI8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S12BCI8 |
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71V3577S85BQG
Renesas Electronics
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1 | The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V3577S85BQG |
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R1Q4A7218ABB-33IB1
Renesas Electronics
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1 | The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low | BGA | R1Q4A7218ABB-33IB1 |
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71T75602S166PFG8
Renesas Electronics
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1 | The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers. | Quad Flat Packages | 71T75602S166PFG8 |
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7134LA20PDG
Renesas Electronics
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1 | The 7134 is a high-speed 4K x 8 Dual-Port Static RAM designed to be used in systems where on-chip hardware port arbitration is not needed. This part lends itself to those systems which cannot tolerate wait states or are designed to be able to externally arbitrate or withstand contention when both sides simultaneously access the same Dual-Port RAM location. An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade prod | Dual-In-Line Packages | 7134LA20PDG |
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