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PB64DPA
Apex Microtechnology
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1 | The PB64 is a high density, low quiescent current, dual channel power booster amplifier designed to perform at slew rates of up to 800V/µs and provide power bandwidth of 1MHz for use in high voltage instrumentation, such as pattern generators in flat panel display inspection systems, semiconductor PPS V/I sources, and print head driver electronics in industrial ink jet printers. The PB64 maximizes design flexibility when used in tandem with a general purpose small signal op amp. | Other | PB64DPA |
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5KP54CA
LITTELFUSE
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1 | • 5 kW peak pulse capability\r\nat 10/1000μs waveform,\r\nrepetition rate (duty\r\ncycles):0.01%\r\n• Glass passivated chip\r\njunction in P600 package\r\n• Fast response time:\r\ntypically less than 1.0ps\r\nfrom 0 Volts to BV min\r\n• Excellent clamping\r\ncapability\r\n• Typical failure mode is\r\nshort from over-specified\r\nvoltage or current\r\n• Whisker test is conducted\r\nbased on JEDEC\r\nJESD201A per its table 4a\r\nand 4c\r\n• IEC 61000-4-2 ESD\r\n30kV(Air), 30kV (Contact)\r\n• EFT protection of data\r\nlines in accordance with\r\nIEC 610 | Diodes, Axial Diameter Horizontal Mounting | 5KP54CA |
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SMC5K48A-M3/I
Vishay
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1 | Unidirectional\r\n• Peak pulse power:\r\n- 5000 W (10/1000 μs)\r\n- 40 kW (8/20 μs)\r\n• Excellent clamping capability\r\n• Very fast response time\r\n• Low incremental surge resistance\r\n• Meets MSL level 1, per J-STD-020, LF maximum peak\r\nof 260 °C\r\n• AEC-Q101 qualified\r\n- Automotive ordering code: base P/NHM3\r\nfor SMC5K10A to SMC5K20A\r\n• UL recognition for safety 497B with file number E136766\r\n• Material categorization: for definitions of compliance\r\nplease see www.vishay.com/doc?99912 | Diodes Moulded | SMC5K48A-M3/I |
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BZW04-5V8
STMicroelectronics
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1 | Peak pulse power:\r\n– 400 W (10/1000 μs)\r\n– up to 2.3 kW (8/20 μs)\r\n• Stand-off voltage range from 5.8 V to 376 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 230 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW04-5V8 |
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SM6T68CA
STMicroelectronics
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1 | AEC-Q101 qualified\r\n• Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs)\r\n• Stand-off voltage range from 5 V to 188 V\r\n• Unidirectional and bidirectional types\r\n• Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C\r\n• Operating Tj\r\n max: 150 °C\r\n• High power capability at Tj\r\n max.: up to 515 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes Moulded Non Polarised | SM6T68CA |
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SM15T24CAY
STMicroelectronics
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1 | ■ Peak pulse power:\r\n– 1500 W (10/1000 µs)\r\n– 10 kW (8/20 µs)\r\n■ Stand-off voltage range: from 5.8 V to 70 V\r\n■ Unidirectional and bidirectional types\r\n■ Low leakage current:\r\n– 0.2 µA at 25 °C\r\n– 1 µA at 85 °C\r\n■ Operating Tj max: 150 °C\r\n■ High power capability at Tjmax:\r\n– 1250 W (10/1000 µs)\r\n■ JEDEC registered package outline\r\n■ Resin meets UL 94, V0\r\n■ AEC-Q101 qualified | Diodes Moulded Non Polarised | SM15T24CAY |
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BZW50-27RL
STMicroelectronics
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1 | Peak pulse power:\r\n– 5000 W (10/1000 μs)\r\n– up to 60 kW (8/20 μs)\r\n• Stand-off voltage range from 12 V to 180 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 3700 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-27RL |
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BZW06-342BRL
STMicroelectronics
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1 | Peak pulse power:\r\n– 600 W (10/1000 μs)\r\n– up to 4 kW (8/20 μs)\r\n• Stand-off voltage range from 5.8 V to 376 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 420 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW06-342BRL |
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SM6T22AY
STMicroelectronics
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1 | Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs)\r\n• Stand-off voltage range from 5 V to 188 V\r\n• Unidirectional and bidirectional types\r\n• Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C\r\n• Operating Tj\r\n max: 150 °C\r\n• High power capability at Tj\r\n max.: up to 515 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes Moulded | SM6T22AY |
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SMBJ12CA-TR
STMicroelectronics
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1 | Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs)\r\n• Stand-off voltage range from 5 V to 188 V\r\n• Unidirectional and bidirectional types\r\n• Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C\r\n• Operating Tj\r\n max: 150 °C\r\n• High power capability at Tj\r\n max.: up to 515 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes Moulded | SMBJ12CA-TR |
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P6KE12CA
STMicroelectronics
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1 | • Peak pulse power:\r\n– 600 W (10/1000 μs)\r\n– up to 4 kW (8/20 μs)\r\n• Stand-off voltage range from 5.8 V to 376 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 420 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | P6KE12CA |
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SM15T22A
STMicroelectronics
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1 | Peak pulse power:\r\n– 1500 W (10/1000 μs)\r\n– up to 10 kW (8/20 μs)\r\n• Stand-off voltage range from 5 V to 188 V\r\n• Unidirectional and bidirectional types\r\n• Low leakage current: 0.2 µA at 25 °C\r\n• Operating Tj\r\n max: 150 °C\r\n• High power capability at Tj\r\n max.: up to 1250 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes Moulded | SM15T22A |
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BZW06-31RL
STMicroelectronics
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1 | Peak pulse power:\r\n– 600 W (10/1000 μs)\r\n– up to 4 kW (8/20 μs)\r\n• Stand-off voltage range from 5.8 V to 376 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 420 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW06-31RL |
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BZW50-22
STMicroelectronics
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1 | Peak pulse power:\r\n– 5000 W (10/1000 μs)\r\n– up to 60 kW (8/20 μs)\r\n• Stand-off voltage range from 12 V to 180 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 3700 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-22 |
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SM15T24A
STMicroelectronics
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1 | • Peak pulse power:\r\n– 1500 W (10/1000 μs)\r\n– up to 10 kW (8/20 μs)\r\n• Stand-off voltage range from 5 V to 188 V\r\n• Unidirectional and bidirectional types\r\n• Low leakage current: 0.2 µA at 25 °C\r\n• Operating Tj\r\n max: 150 °C\r\n• High power capability at Tj\r\n max.: up to 1250 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes Moulded | SM15T24A |
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BZW50-39
STMicroelectronics
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1 | • Peak pulse power:\r\n– 5000 W (10/1000 μs)\r\n– up to 60 kW (8/20 μs)\r\n• Stand-off voltage range from 12 V to 180 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 3700 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-39 |
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SM6T12CAY
STMicroelectronics
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1 | Peak pulse power:\r\n– 600 W (10/1000 µs)\r\n– 4 kW (8/20 µs)\r\n• Stand-off voltage range: from 6 V to 70 V\r\n• Unidirectional and bidirectional types\r\n• Low leakage current:\r\n– 0.2 µA at 25 °C\r\n– 1 µA at 85 °C\r\n• Operating Tj max: 150 °C\r\n• High power capability at Tj max:\r\n– 515 W (10/1000 µs)\r\n• JEDEC registered package outline\r\n• Resin meets UL 94, V0\r\n• AEC-Q101 qualified | Diodes Moulded | SM6T12CAY |
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BZW50-33
STMicroelectronics
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1 | Peak pulse power:\r\n– 5000 W (10/1000 μs)\r\n– up to 60 kW (8/20 μs)\r\n• Stand-off voltage range from 12 V to 180 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 3700 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-33 |
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BZW50-15
STMicroelectronics
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1 | Peak pulse power:\r\n– 5000 W (10/1000 μs)\r\n– up to 60 kW (8/20 μs)\r\n• Stand-off voltage range from 12 V to 180 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 3700 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-15 |
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BZW50-27B
STMicroelectronics
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1 | • Peak pulse power:\r\n– 5000 W (10/1000 μs)\r\n– up to 60 kW (8/20 μs)\r\n• Stand-off voltage range from 12 V to 180 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 3700 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-27B |
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1.5KE100CA
STMicroelectronics
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1 | • Peak pulse power:\r\n– 1500 W (10/1000 μs)\r\n– up to 10 kW (8/20 μs)\r\n• Stand-off voltage range from 5 V to 376 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 1100 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | 1.5KE100CA |
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BZW04-5V8B
STMicroelectronics
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1 | Peak pulse power:\r\n– 400 W (10/1000 μs)\r\n– up to 2.3 kW (8/20 μs)\r\n• Stand-off voltage range from 5.8 V to 376 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 230 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW04-5V8B |
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SMBJ10CA-TR
STMicroelectronics
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1 | Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs)\r\n• Stand-off voltage range from 5 V to 188 V\r\n• Unidirectional and bidirectional types\r\n• Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C\r\n• Operating Tj\r\n max: 150 °C\r\n• High power capability at Tj\r\n max.: up to 515 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes Moulded | SMBJ10CA-TR |
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SM6T16V5AY
STMicroelectronics
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1 | AEC-Q101 qualified\r\n• Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs)\r\n• Stand-off voltage range from 5 V to 188 V\r\n• Unidirectional and bidirectional types\r\n• Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C\r\n• Operating Tj\r\n max: 150 °C\r\n• High power capability at Tj\r\n max.: up to 515 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes Moulded | SM6T16V5AY |
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BZW50-12B
STMicroelectronics
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1 | Peak pulse power:\r\n– 5000 W (10/1000 μs)\r\n– up to 60 kW (8/20 μs)\r\n• Stand-off voltage range from 12 V to 180 V\r\n• Unidirectional and bidirectional types\r\n• Operating Tj\r\n max: 175 °C\r\n• High power capability at Tj\r\n max.: up to 3700 W (10/1000 µs)\r\n• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-12B |
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