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Image Part Number D.S Description Package Category Prices / Stock Model Action
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MSC045SMB120B4NVAO Microchip Technology Inc
1 Power Field-Effect Transistor, 49A I(D), 1200V, 0.06ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 MSC045SMB120B4NVAO 0 Build or Request
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EC3SMB-12-9.000M Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 9MHz Nom EC3SMB-12-9.000M 0 Build or Request
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P6SMB120CAR5 Taiwan Semiconductor
1 Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA P6SMB120CAR5 0 Build or Request
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1.0SMB12CA YAGEO Corporation
1 Trans Voltage Suppressor Diode, 1000W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA 1.0SMB12CA 0 Build or Request
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P6SMB12HE3TRTB Fagor Electrónica
1 Trans Voltage Suppressor Diode, 600W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA P6SMB12HE3TRTB 0 Build or Request
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P6SMB12CA JCET Group
1 600W glass passivated transient voltage suppressor diode in SMBG package, with VRWM from 5.8V to 513V, peak pulse current up to 57.1A, and clamping voltage up to 828V. P6SMB12CA 0 Build or Request
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P6SMB120CA Luguang Electronic Technology Co Ltd
1 Transient Voltage Suppressor Diode, Type: Bidirectional; Case Style : SMB; Peak Power Dissipation Ppk (W): 600; VBR Min. (V): 114; VBR Max (V): 126; Reverse current at stand-off voltage Vwm (V): 102; Max Clamping Voltage Ippm. (A): 3.64; Max Clamping Voltage Vc. (V): 165 P6SMB120CA 0 Build or Request
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P6SMB12A Luguang Electronic Technology Co Ltd
1 Transient Voltage Suppressor Diode, Type: Unidirectional; Case Style : SMB; Peak Power Dissipation Ppk (W): 600; VBR Min. (V): 11.4; VBR Max (V): 12.6; Reverse current at stand-off voltage Vwm (V): 10.2; Max Clamping Voltage Ippm. (A): 35.93; Max Clamping Voltage Vc. (V): 16.7 P6SMB12A 0 Build or Request
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1.0SMB12CAQF1 Yangzhou Yangjie Electronics Co Ltd
1 Trans Voltage Suppressor Diode 1.0SMB12CAQF1 0 Build or Request
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P6SMB12CA Luguang Electronic Technology Co Ltd
1 Transient Voltage Suppressor Diode, Type: Bidirectional; Case Style : SMB; Peak Power Dissipation Ppk (W): 600; VBR Min. (V): 11.4; VBR Max (V): 12.6; Reverse current at stand-off voltage Vwm (V): 10.2; Max Clamping Voltage Ippm. (A): 35.93; Max Clamping Voltage Vc. (V): 16.7 P6SMB12CA 0 Build or Request
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P6SMB120CAHE3_B/I Vishay Intertechnologies
1 Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA P6SMB120CAHE3_B/I 0 Build or Request
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1.5SMB12AF1 Yangzhou Yangjie Electronics Co Ltd
1 Trans Voltage Suppressor Diode 1.5SMB12AF1 0 Build or Request
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P6SMB12-T/R PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 600W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA P6SMB12-T/R 0 Build or Request
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P6SMB12A-AU_R2_000A1 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 600W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA P6SMB12A-AU_R2_000A1 0 Build or Request
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P6SMB12AT3 Freescale Semiconductor
1 TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,10.2V V(RWM),DO-214AA / SMB P6SMB12AT3 0 Build or Request
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P6SMB120A_R1_00001 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA P6SMB120A_R1_00001 0 Build or Request
Part Image Part Image 1 Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon P6SMB120APBFREE 0 Build or Request
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P6SMB12AHE3_B/I Vishay Intertechnologies
1 Trans Voltage Suppressor Diode, 600W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA P6SMB12AHE3_B/I 0 Build or Request
Part Image Part Image 1 Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Bidirectional, 1 Element P6SMB120CATR13PBFREE 0 Build or Request
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MSC040SMB120SDT/R Microchip Technology Inc
1 Power Field-Effect Transistor MSC040SMB120SDT/R 0 Build or Request
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P6SMB120CA Central Semiconductor Corp
1 Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Bidirectional, 1 Element, Silicon P6SMB120CA 0 Build or Request
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P6SMB12CA-E MERITEK Electronics Corporation
1 Trans Voltage Suppressor Diode, 600W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA P6SMB12CA-E 0 Build or Request
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1KSMB12CAHM4G Taiwan Semiconductor
1 Trans Voltage Suppressor Diode, 1000W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA 1KSMB12CAHM4G 0 Build or Request
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P6SMB120HM4G Taiwan Semiconductor
1 Trans Voltage Suppressor Diode, 600W, 97.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA P6SMB120HM4G 0 Build or Request
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TP6SMB12A Galaxy Microelectronics
1 Trans Voltage Suppressor Diode TP6SMB12A 0 Build or Request
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