Showing 25 of 847155 results
Filter by Manufacturer
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
|---|
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
71T75902S85BG
Renesas Electronics
|
1 | The 71T75902 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. | BGA | 71T75902S85BG |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
7143SA35G
Renesas Electronics
|
1 | The 7143 is a high-speed 2K x 16 Dual-Port Static RAMs. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit-or-wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Military grade product in compliance with MIL-PRF-38535 QML is available. | Other | 7143SA35G |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
71V3559S80BGI
Renesas Electronics
|
1 | The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). | BGA | 71V3559S80BGI |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
7026L25GB
Renesas Electronics
|
1 | The 7026 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Other | 7026L25GB |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
71V3577S80BQ8
Renesas Electronics
|
1 | The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V3577S80BQ8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
7164S100DB
Renesas Electronics
|
1 | The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 7164S100DB |
2
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
70V7519S166BF
Renesas Electronics
|
1 | The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7519S166BF |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
71V2556S100PFGI
Renesas Electronics
|
1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V2556S100PFGI |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
70T651S10BFI8
Renesas Electronics
|
1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BFI8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
71V3557S85BGI
Renesas Electronics
|
1 | The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). | BGA | 71V3557S85BGI |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
7006S20G
Renesas Electronics
|
1 | The 7006 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Other | 7006S20G |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
M48T35Y-70MH1F
STMicroelectronics
|
1 | 5 V, 256 Kbit (32 Kb x 8) TIMEKEEPER® SRAM | Small Outline Packages | M48T35Y-70MH1F |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
71T75802S166BGG
Renesas Electronics
|
1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S166BGG |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
70V657S12BC
Renesas Electronics
|
1 | The 70V657 is a high-speed 32K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por | BGA | 70V657S12BC |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
71V25761S183PFG
Renesas Electronics
|
1 | The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V25761S183PFG |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
70T659S15BF8
Renesas Electronics
|
1 | The 70T659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T659S15BF8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
70V658S12BCI
Renesas Electronics
|
1 | The 70V658 is a high-speed 64K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por | BGA | 70V658S12BCI |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
70V3319S133BC
Renesas Electronics
|
1 | The 70V3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3319S133BC |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
M48T08-100PC1
STMicroelectronics
|
1 | STMicroelectronics M48T08-100PC1 NVRAM, 64kbit, 100ns 28-Pin PCDIP | Dual-In-Line Packages | M48T08-100PC1 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
70V07L25PFG8
Renesas Electronics
|
1 | The 70V07 is a high-speed 32K x 8 Dual-Port Static RAM designed to be used as a stand-alone 256K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V07L25PFG8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
70T653MS10BCG
Renesas Electronics
|
1 | The 70T653M is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone 18874K-bit Dual-Port RAM. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T653MS10BCG |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
71V321L35JG8
Renesas Electronics
|
1 | The 71V321 is a high-speed 2K x 8 Dual-Port Static RAMs with internal interrupt logic for interprocessor communications. The device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. | Plastic Leaded Chip Carrier | 71V321L35JG8 |
2
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
71V67903S75BQ
Renesas Electronics
|
1 | The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V67903S75BQ |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
70V3589S133BCI8
Renesas Electronics
|
1 | The 70V3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3589S133BCI8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
71V3558S133PFG
Renesas Electronics
|
1 | The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers. | Quad Flat Packages | 71V3558S133PFG |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||