S3JB- Model Download Search Results
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SS10000000ACS3JB
Hong Kong X'Tals Ltd
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1 | Series - 3Rd Overtone Quartz Crystal, 100MHz Max, 100MHz Nom | SS10000000ACS3JB |
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HS3JB-K
Taiwan Semiconductor
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1 | Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AA | HS3JB-K |
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HC49US3-JB0F18-8.900
ILSI America LLC
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1 | Parallel - Fundamental Quartz Crystal, 8.9MHz Nom | HC49US3-JB0F18-8.900 |
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S210000000JCS3JB
Hong Kong X'Tals Ltd
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1 | Series - 3Rd Overtone Quartz Crystal, 100MHz Max, 100MHz Nom | S210000000JCS3JB |
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S3JBP
Micro Commercial Components
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1 | DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Rectifier Diode | S3JBP |
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S2100000003CS3JB
Hong Kong X'Tals Ltd
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1 | Series - 3Rd Overtone Quartz Crystal, 100MHz Max, 100MHz Nom | S2100000003CS3JB |
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S2M2600000MCS3JB
Hong Kong X'Tals Ltd
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1 | Series - 3Rd Overtone Quartz Crystal, 26MHz Max, 26MHz Nom | S2M2600000MCS3JB |
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S4100000001CS3JB
Hong Kong X'Tals Ltd
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1 | Series - 3Rd Overtone Quartz Crystal, 100MHz Max, 100MHz Nom | S4100000001CS3JB |
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S310000000CCS3JB
Hong Kong X'Tals Ltd
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1 | Series - 3Rd Overtone Quartz Crystal, 100MHz Max, 100MHz Nom | S310000000CCS3JB |
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SSM2600000ACS3JB
Hong Kong X'Tals Ltd
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1 | Series - 3Rd Overtone Quartz Crystal, 26MHz Max, 26MHz Nom | SSM2600000ACS3JB |
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S2M6886000PCS3JB
Hong Kong X'Tals Ltd
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1 | Series - 3Rd Overtone Quartz Crystal, 68.86MHz Max, 68.86MHz Nom | S2M6886000PCS3JB |
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HC49US3-JB3F18-12.900
ILSI America LLC
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1 | Parallel - Fundamental Quartz Crystal, 12.9MHz Nom | HC49US3-JB3F18-12.900 |
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MRS3JB7L50
SEI Stackpole Electronics Inc
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1 | Fixed Resistor, Metal Alloy, 3W, 0.0075ohm, 5% +/-Tol, -50,50ppm/Cel, | MRS3JB7L50 |
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S210000000DCS3JB
Hong Kong X'Tals Ltd
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1 | Series - 3Rd Overtone Quartz Crystal, 100MHz Max, 100MHz Nom | S210000000DCS3JB |
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HC49US3-JB0F18-9.000
ILSI America LLC
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1 | Parallel - Fundamental Quartz Crystal, 9MHz Nom | HC49US3-JB0F18-9.000 |
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ES3JB
Shandong Jingdao Microelectronics Co Ltd
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1 | Surface Mount Superfast Recovery Rectifier in SMB package, with reverse voltage from 50 to 600 V, forward current of 3 A, low profile, glass passivated junction, and lead-free compliant design. | ES3JB |
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US3JBF
Shandong Jingdao Microelectronics Co Ltd
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1 | Surface mount ultrafast recovery rectifier with 3.0 A forward current, 50 to 1000 V reverse voltage range, 80 A peak surge current, and low profile SMBF package for high efficiency applications. | US3JBF |
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S3JBF
SUNMATE electronic Co., LTD
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1 | Surface mount rectifier diode in SMBF case, 3.0A average rectified current, 50-1000V DC blocking voltage, 1.20V forward voltage at 3.0A, 100A non-repetitive surge current, operating junction temperature from -65 to +150°C. | S3JBF |
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US3JB
SUNMATE electronic Co., LTD
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1 | Surface mount ultra-fast rectifier diode in SMB (DO-214AA) package, 3.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated, with solderable terminals and cathode band marking. | US3JB |
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ES3JB
SUNMATE electronic Co., LTD
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1 | Surface mount super fast recovery diodes in SMB/DO-214AA package with 50 to 600V reverse voltage range, 3.0A average rectified current, 100A peak forward surge current, and 35ns reverse recovery time.Surface mount super fast recovery diodes in SMB/DO-214AA package, rated 50-600V repetitive reverse voltage, 3.0A average rectified current, 100A peak forward surge, 35ns reverse recovery time, operating junction temperature -65 to +150°C.Surface mount super fast recovery diodes in SMB/DO-214AA package, rated for 50 to 600V repetitive reverse voltage, 3.0A average rectified current, 100A non-repetitive surge current, with low forward voltage drop and 35ns reverse recovery time.Surface mount super fast recovery diodes in SMB/DO-214AA package, rated 50-600V repetitive reverse voltage, 3.0A average rectified current, 100A non-repetitive surge current, 35ns reverse recovery time, and operating junction temperature from -65 to +150°C.Surface mount super fast recovery diodes in SMB/DO-214AA package, rated for 3.0A average rectified current and 50 to 600V peak repetitive reverse voltage, with 35ns reverse recovery time and low forward voltage drop. | ES3JB |
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US3JBF (UF3JBF)
Shenzhen Heketai Electronics Co Ltd
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1 | Ultrafast recovery rectifier diode in SMBF surface mount package, with repetitive peak reverse voltage from 50 to 1000 V, average forward current up to 3 A, and low forward voltage drop.Ultrafast recovery rectifier diode in SMBF surface mount package, with maximum repetitive peak reverse voltage from 50 to 1000 V, forward current up to 3 A, and reverse recovery time as low as 50 ns.Ultrafast recovery rectifier diode in SMBF surface mount package, with repetitive peak reverse voltage from 50 to 1000 V, average forward current up to 3 A, and low forward voltage drop.Ultrafast recovery rectifier diode in SMBF surface mount package, with repetitive peak reverse voltage from 50 to 1000 V, average forward current up to 3 A, and low forward voltage drop. | US3JBF (UF3JBF) |
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NWWS3JB110R
SEI Stackpole Electronics Inc
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1 | Fixed Resistor, Wire Wound, 3.2W, 110ohm, 5% +/-Tol, 20ppm/Cel, Through Hole Mount, AXIAL | NWWS3JB110R |
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MRS3JB6L80
SEI Stackpole Electronics Inc
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1 | Fixed Resistor, Metal Alloy, 3W, 0.0068ohm, 5% +/-Tol, -50,50ppm/Cel, | MRS3JB6L80 |
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HC49US3-JB9F18-3.490
ILSI America LLC
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1 | Parallel - Fundamental Quartz Crystal, 3.49MHz Nom | HC49US3-JB9F18-3.490 |
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HC49US3-JB9F18-3.500
ILSI America LLC
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1 | Parallel - Fundamental Quartz Crystal, 3.5MHz Nom | HC49US3-JB9F18-3.500 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/do214_2.jpg"])
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