Showing 25 of 165774 results
Filter by Manufacturer
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
---|
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R2A20162NS
Renesas Electronics
|
1 | The R2A20162 is an integrated circuit semiconductor of CMOS structure with 2 channels of built in D/A converters with output buffer op-amps. It is the electrical characteristic improvement version of the M62342. Serial data transfer type input can easily be used through a combination of three lines: DI, CLK, and LD. Outputs incorporate buffer op-amps that have a drive capacity of 1 mA or above for both sink source, and can operate over the entire voltage range from almost ground to Vcc ( 0 to 5V ), making p | R2A20162NS |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20114AFP#W1
Renesas Electronics
|
1 | Support is limited to customers who have already adopted these products.R2A20114AFP/ASP is a boost converter control IC with PFC (Power Factor Correction). Employing continuous conduction mode interleaving PFC, it performs higher efficiency and lower switching noise even for high power use. Interleaving control of the boost converters, namely, producing 180 degrees phase shift between the output signals (GD1, 2) driving the boost converters, enables the system to perform high conversion efficiency and low s | R2A20114AFP#W1 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20114AFP#W5
Renesas Electronics
|
1 | Support is limited to customers who have already adopted these products.R2A20114AFP/ASP is a boost converter control IC with PFC (Power Factor Correction). Employing continuous conduction mode interleaving PFC, it performs higher efficiency and lower switching noise even for high power use. Interleaving control of the boost converters, namely, producing 180 degrees phase shift between the output signals (GD1, 2) driving the boost converters, enables the system to perform high conversion efficiency and low s | R2A20114AFP#W5 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20152NS
Renesas Electronics
|
1 | The R2A20152 is an integrated circuit semiconductor of CMOS structure with 2 channels of built in D/A converters with output buffer operational amplifiers. It is the characteristic improvement version of M62332. The input interface is I²C Bus serial data method, and connects with a microcomputer with minimum wiring. It conforms FAST-MODE of I²C BUS Specifications. The output circuit is composed of buffer operational amplifier with sync and source drive capacity of 1. 0 mA or more, and it operates in the who | R2A20152NS |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20162SP
Renesas Electronics
|
1 | The R2A20162 is an integrated circuit semiconductor of CMOS structure with 2 channels of built in D/A converters with output buffer op-amps. It is the electrical characteristic improvement version of the M62342. Serial data transfer type input can easily be used through a combination of three lines: DI, CLK, and LD. Outputs incorporate buffer op-amps that have a drive capacity of 1 mA or above for both sink source, and can operate over the entire voltage range from almost ground to Vcc ( 0 to 5V ), making p | R2A20162SP |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20162SA
Renesas Electronics
|
1 | The R2A20162 is an integrated circuit semiconductor of CMOS structure with 2 channels of built in D/A converters with output buffer op-amps. It is the electrical characteristic improvement version of the M62342. Serial data transfer type input can easily be used through a combination of three lines: DI, CLK, and LD. Outputs incorporate buffer op-amps that have a drive capacity of 1 mA or above for both sink source, and can operate over the entire voltage range from almost ground to Vcc ( 0 to 5V ), making p | R2A20162SA |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20131SP#W0
Renesas Electronics
|
1 | The R2A20131 is power factor correction control IC of continuous conduction mode. The R2A20131 is built in Load Tracing Boost, Brownout, Over Voltage Protection, Over Current Protection, FeedBack loop Open detection and Power Good Function. Load tracing boost function bring improvement of efficiency at light load with few external parts. The feedback loop open detection, and over current protection are built in the R2A20131, and can constitute a power supply system of high reliability with few external part | R2A20131SP#W0 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20154NS
Renesas Electronics
|
1 | The R2A20154 is an integrated circuit semiconductor of CMOS structure with 4 channels of built in D/A converters with output buffer operational amplifiers. It is the electrical characteristic improvement version of the M62334. The input is 2-wires serial method is used for the transfer format of digital data to allow connection with a microcomputer with minimum wiring. This IC corresponds to Fast mode of I²C BUS standard. The output buffer operational amplifier employs AB class output circuit with sync and | R2A20154NS |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MTC50-YA2-016
TE Connectivity
|
1 | Body Features: Primary Product Color Black | Primary Product Material High Grade Polyarylene Thermoplastic | Configuration Features: Number of Positions 40 | Contact Features: Contact Current Rating (Max) 1.5 AMP | Contact Type Socket | Dimensions: Wire Size 24 AWG | Wire Size 26 AWG | Wire Size .25 – .14 MMSQ | Housing Features: Centerline (Pitch) .05 INCH | Centerline (Pitch) 1.27 MM | Mechanical Attachment: Polarization Code A | Connector Mounting Type Panel Mount | Operation/Application: Compatible Wi | MTC50-YA2-016 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20152SP
Renesas Electronics
|
1 | The R2A20152 is an integrated circuit semiconductor of CMOS structure with 2 channels of built in D/A converters with output buffer operational amplifiers. It is the characteristic improvement version of M62332. The input interface is I²C Bus serial data method, and connects with a microcomputer with minimum wiring. It conforms FAST-MODE of I²C BUS Specifications. The output circuit is composed of buffer operational amplifier with sync and source drive capacity of 1. 0 mA or more, and it operates in the who | R2A20152SP |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
V23079A2011B301
TE Connectivity
|
1 | Body Features: Insulation Special Features 2500V Initial Surge Withstand Voltage between Contacts & Coil | Product Weight 2.8 G | Product Weight .0988 OZ | Contact Features: Contact Current Class 0 – 2 AMP | Contact Arrangement 2 Form A (NO) | Contact Special Features Bifurcated/Twin Contacts | Contact Current Rating (Max) 2 AMP | Contact Plating Material Gold | Contact Base Material AgNi+Au | Contact Number of Poles 2 | Dimensions: Insulation Clearance Between Contact and Coil .051 INCH | Product Height | V23079A2011B301 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20131SP
Renesas Electronics
|
1 | The R2A20131 is power factor correction control IC of continuous conduction mode. The R2A20131 is built in Load Tracing Boost, Brownout, Over Voltage Protection, Over Current Protection, FeedBack loop Open detection and Power Good Function. Load tracing boost function bring improvement of efficiency at light load with few external parts. The feedback loop open detection, and over current protection are built in the R2A20131, and can constitute a power supply system of high reliability with few external part | R2A20131SP |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
V23079A2011B301
TE Connectivity
|
1 | Body Features: Insulation Special Features 2500V Initial Surge Withstand Voltage between Contacts & Coil | Product Weight 2.8 G | Product Weight .0988 OZ | Contact Features: Contact Current Class 0 – 2 AMP | Contact Arrangement 2 Form A (NO) | Contact Special Features Bifurcated/Twin Contacts | Contact Current Rating (Max) 2 AMP | Contact Plating Material Gold | Contact Base Material AgNi+Au | Contact Number of Poles 2 | Dimensions: Insulation Clearance Between Contact and Coil .051 INCH | Product Height | V23079A2011B301 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
R2A20154SP
Renesas Electronics
|
1 | The R2A20154 is an integrated circuit semiconductor of CMOS structure with 4 channels of built in D/A converters with output buffer operational amplifiers. It is the electrical characteristic improvement version of the M62334. The input is 2-wires serial method is used for the transfer format of digital data to allow connection with a microcomputer with minimum wiring. This IC corresponds to Fast mode of I²C BUS standard. The output buffer operational amplifier employs AB class output circuit with sync and | R2A20154SP |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
V23100V6003A201
TE Connectivity
|
1 | Contact Features: Contact Number of Poles 4 | Contact Arrangement 2 Form A (NO) | Contact Current Rating (Max) .75 AMP | Dimensions: Product Width .413 INCH | Product Height .413 INCH | Product Height 10.5 MM | Product Length 1.02 INCH | Product Width 10.5 MM | Product Length 26 MM | Electrical Characteristics: Coil Voltage Rating 24 VDC | Contact Switching Voltage (Max) 100 VDC | Coil Power Rating DC 149 MILW | Contact Voltage Rating 100 VDC | Coil Resistance 3860 OHM | Mechanical Attachment: Product Mount | V23100V6003A201 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SMX11A201JAN360
Kyocera AVX Components
|
1 | Ceramic Capacitor, Ceramic, 100V, 5% +Tol, 5% -Tol, C0G, -/+30ppm/Cel TC, 0.0002uF, | SMX11A201JAN360 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SMX15A201MAP360
Kyocera AVX Components
|
1 | Ceramic Capacitor, Ceramic, 50V, 20% +Tol, 20% -Tol, C0G, -/+30ppm/Cel TC, 0.0002uF, | SMX15A201MAP360 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SM017A201KBL120
Kyocera AVX Components
|
1 | Ceramic Capacitor, Ceramic, 500V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0002uF, | SM017A201KBL120 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SM047A201JBN120
Kyocera AVX Components
|
1 | Ceramic Capacitor, Ceramic, 500V, 5% +Tol, 5% -Tol, C0G, -/+30ppm/Cel TC, 0.0002uF, 4044, | SM047A201JBN120 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
DM15FA201JO1CRT
Cornell Dubilier Electronics Inc
|
1 | Mica Capacitor, Mica, 100V, 5% +Tol, 5% -Tol, 0/+70ppm/Cel TC, 0.0002uF, | DM15FA201JO1CRT |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
XA-20-1
Cobham RFMW Solutions
|
1 | SPDT, 950MHz Min, 1220MHz Max, 0.65dB Insertion Loss-Max | XA-20-1 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
E1SBA20-13.240M
Ecliptek Corporation
|
1 | Quartz Crystal Resonator HC49/UP Short 2 Pad Surface Mount (SMD) 3.2mm Height Metal Resistance Weld Seal 13.240MHz ±50ppm/100ppm over -20°C to +70°C | E1SBA20-13.240M |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
201A20169X
Conec Corporation
|
1 | Board Connector, 24 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Receptacle | 201A20169X |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CQA201015K-10%100PPM/KNB4
Microtech GmbH Electronic
|
1 | Fixed Resistor, Metal Glaze/thick Film, 0.5W, 15000ohm, 300V, 10% +/-Tol, 100ppm/Cel, 2010, | CQA201015K-10%100PPM/KNB4 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
E1SLA20-18.430M
Ecliptek Corporation
|
1 | Quartz Crystal Resonator HC49/UP Short 2 Pad Surface Mount (SMD) 3.2mm Height Metal Resistance Weld Seal 18.430MHz ±15ppm/20ppm over -20°C to +70°C | E1SLA20-18.430M |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||