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M10082040108X0PSAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0PSAR |
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M10082040108X0ISAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0ISAR |
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62100821921
Würth Elektronik
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1 | WR-PHD 2.00 mm Dual SMT Pin Header SMT, 8 pins, dual row, straight, gold plating | Other | 62100821921 |
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7443310082
Würth Elektronik
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1 | WE-HCC SMT High Current Inductor (Iron Powder) Size 1210; L = 0.82 µH; IRP = 32.5 A; Isat = 67.8 A; RDC_max = 2.5 mΩ | Inductors Precision Moulded | 7443310082 |
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M10082040054X0PSAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0PSAY |
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M10082040054X0IWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040054X0IWAY |
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0805J0100821GCR
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 0805J0100821GCR |
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046227012100829+
Kyocera AVX
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1 | FFC & FPC Connectors 1.0mm Pitch 12pos RA Dual Sld Lock Au | Other | 046227012100829+ |
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M10082040108X0PWAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040108X0PWAR |
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15210082401000
HARTING
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1 | Connectors, Female connector, THR connection, Contacts: 8, Straight | Other | 15210082401000 |
2
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62100821821
Würth Elektronik
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1 | WR-PHD 2.00 mm Dual SMT Socket Header 8 pins, dual row, straight, gold plating | Other | 62100821821 |
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AISC-1008-2R2J-T
ABRACON
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1 | SMD Wire-Wound Chip Inductor | Other | AISC-1008-2R2J-T |
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M10082040108X0PSAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0PSAY |
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784364210082
Würth Elektronik
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1 | WE-SFIA SMT Flat wire inductor Size 2013; L = 0.82 µH ; IR = 34.5 A; Isat = 130 A; RDC = 2.09 mΩ | Other | 784364210082 |
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046227004100829+
Kyocera AVX
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1 | FFC & FPC Connectors 4P LIF RA SMD 1mm Dual Sided T&R | Other | 046227004100829+ |
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861-008-213R004
NorComp
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1 | Circular Metric Connectors M12 8 Pos F Rt Ang Pan mnt | Other | 861-008-213R004 |
3
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245846040100829+
Kyocera AVX
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1 | 40 Position Connector Receptacle, Center Strip Contacts Surface Mount Gold | Other | 245846040100829+ |
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S1008-222J
API Delevan
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1 | Fixed Inductors 2.2uH 5% .8ohm Shielded SMT Induc | Inductors Precision Moulded | S1008-222J |
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15210082601333
HARTING
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1 | har-flex straight female 6.25mm, 8pin, PL1, sample | Other | 15210082601333 |
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M10082040108X0ISAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0ISAY |
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ASMPH-1008-2R2M-T
ABRACON
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1 | 2.2 õH Shielded Multilayer Inductor 1.3 A 80mOhm 1008 (2520 Metric) | Inductors Chip | ASMPH-1008-2R2M-T |
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ASMPH-1008-2R2M
ABRACON
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1 | 2.2 µH Shielded Multilayer Inductor 1.3 A 80mOhm 1008 (2520 Metric) | Inductors Chip | ASMPH-1008-2R2M |
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AISC-1008-2R7G-T
ABRACON
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1 | Inductor RF Wirewound 3.3uH 2% 7.9MHz 22Q-Factor Ceramic 0.29A 3.4Ohm DCR 1008 T/R | Other | AISC-1008-2R7G-T |
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M10082040108X0IWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040108X0IWAY |
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1210Y0100821KCT
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 1210Y0100821KCT |
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