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1713399
Phoenix Contact
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1 | MCV 1,5/19-GF-3,5 P20 THR - PCB headers, nominal cross section: 1.5 mm2, color: black, nominal current: 8 A, rated voltage (III/2): 160 V, contact surface: Sn, contact connection type: Pin, number of potentials: 19, number of rows: 1, number of positions: 19, number of connections: 19, product range: MCV 1,5/..-GF-THR, pitch: 3.5 mm, mounting: THR soldering / wave soldering, pin layout: Linear pinning, solder pin [P]: 2 mm, number of solder pins per potential: 1, plug-in system: COMBICON MC 1,5, | Other | 1713399 |
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1943399
Phoenix Contact
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1 | IC 2,5 HC/10-G-5,08 - PCB headers, nominal cross section: 2.5 mm2, color: green, nominal current: 16 A, rated voltage (III/2): 320 V, contact surface: Sn, contact connection type: Socket, number of potentials: 10, number of rows: 1, number of positions: 10, number of connections: 10, product range: IC 2,5 HC/..-G, pitch: 5.08 mm, mounting: Wave soldering, pin layout: Linear pinning, solder pin [P]: 3.5 mm, number of solder pins per potential: 2, plug-in system: COMBICON MSTB 2,5 HC, Pin connector | Other | 1943399 |
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70V3399S133PRF
Renesas Electronics
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1 | The 70V3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | Quad Flat Packages | 70V3399S133PRF |
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70T3399S133BFI8
Renesas Electronics
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1 | The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3399S133BFI8 |
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MCZ33996EKR2
NXP
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1 | Power Switch ICs - Power Distribution 16 LOW SIDE SW 1.20HM | Small Outline Packages | MCZ33996EKR2 |
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1A3399-10-R
Eaton
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1 | FUSE HOLDER CLIP, PCB Fuse Clip 1 Circuit Cartridge Through Hole | Other | 1A3399-10-R |
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B41252B3399M067
TDK
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1 | Snap-in Capacitors, 39000?F/10VDC, 30mm dia x 40mm length | Capacitor, Polarized Radial Diameter | B41252B3399M067 |
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70T3399S166BC8
Renesas Electronics
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1 | The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3399S166BC8 |
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70V3399S133BF
Renesas Electronics
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1 | The 70V3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3399S133BF |
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3-2339978-1
TE Connectivity
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1 | Configuration Features: Port Matrix Configuration 2 x 4 | Number of Ports 8 | Number of Positions 20 | Electrical Characteristics: Data Rate (Max) 56 GBS | Housing Features: Centerline (Pitch) .018 INCH | Centerline (Pitch) .6 MM | Operation/Application: Circuit Application Signal | Pluggable I/O Applications SFP28 | Other: Included Lightpipe No | EMI Containment Feature Type Internal/External EMI Springs | Product Type Features: Pluggable I/O Product Type Cage Assembly with Integrated Connector | Cage Type | Other | 3-2339978-1 |
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B41231B3399M062
TDK
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1 | Snap-in Capacitors, 39000??F/10VDC, 30mm dia x 35mm length | Other | B41231B3399M062 |
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70T3399S133BC8
Renesas Electronics
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1 | The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3399S133BC8 |
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B41231C3399M060
TDK
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1 | Snap-in Capacitors, 39000?F/10VDC, 35mm dia x 30mm length | Capacitor, Polarized Radial Diameter | B41231C3399M060 |
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70V3399S133BFI8
Renesas Electronics
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1 | The 70V3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3399S133BFI8 |
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70T3399S133BFI
Renesas Electronics
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1 | The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3399S133BFI |
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70T3399S133BF8
Renesas Electronics
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1 | The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3399S133BF8 |
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B82496C3399J
TDK
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1 | SMT inductors 3.9nH ±5% | Other | B82496C3399J |
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B82496C3399J000
TDK
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1 | SMD / SMT Inductors (Coils), L=0.0039μH, 1.6mm x 0.8mm [EIA 0603] | Inductors Chip | B82496C3399J000 |
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B41252B3399M060
TDK
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1 | Snap-in Capacitors, 39000?F/10VDC, 30mm dia x 40mm length | Capacitor, Polarized Radial Diameter | B41252B3399M060 |
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B41231B3399M067
TDK
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1 | Snap-in Capacitors, 39000?F/10VDC, 30mm dia x 35mm length | Capacitor, Polarized Radial Diameter | B41231B3399M067 |
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70V3399S133PRF8
Renesas Electronics
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1 | The 70V3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | Quad Flat Packages | 70V3399S133PRF8 |
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SIT8008BC-13-33E-33.994515
SiTime
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1 | Low Power Programmable Oscillator | Other | SIT8008BC-13-33E-33.994515 |
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70T3399S200BC
Renesas Electronics
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1 | The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3399S200BC |
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B41231A3399M060
TDK
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1 | Snap-in Capacitors, 39000?F/10VDC, 25.4mm dia x 45mm length | Capacitor, Polarized Radial Diameter | B41231A3399M060 |
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70V3399S133BF8
Renesas Electronics
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1 | The 70V3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3399S133BF8 |
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![Part Image](["https://caas.phoenixcontact.com/caas/v1/stable/media/1236194/full/b148?format=jpg","https://caas.phoenixcontact.com/caas/v1/stable/media/1236194/full/b148?format=jpg",null])
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