4N60G Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	4N60G-Q-TM3-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-Q-TM3-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-E-TN3-R Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	4N60G-E-TN3-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-S-TQ2-R Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	4N60G-S-TQ2-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-E-TMS-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-E-TMS-T	3D model not available Symbol and footprint not available 0	0 Build or Request

	4N60G-T2Q-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	4N60G-T2Q-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-TF1-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	4N60G-TF1-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-Q-TMS2-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-Q-TMS2-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-C-TM3-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-C-TM3-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-Q-TQ2-R Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	4N60G-Q-TQ2-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-N-TQ2-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	4N60G-N-TQ2-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-HC-TMN2-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-HC-TMN2-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-TC4-TM3-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-TC4-TM3-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-C-TN3-R Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	4N60G-C-TN3-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-S-TMS-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-S-TMS-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-S-K08-5060-R Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	4N60G-S-K08-5060-R	3D model not available Symbol and footprint not available 0	0 Build or Request

	4N60G-E-TMS2-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-E-TMS2-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-E-TMS4-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-E-TMS4-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-E-TND-R Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	4N60G-E-TND-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-Q-K08-5060-R Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	4N60G-Q-K08-5060-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-S-TF1-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	4N60G-S-TF1-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-TQ3-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	4N60G-TQ3-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-Q-TF2-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	4N60G-Q-TF2-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-TMS-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	4N60G-TMS-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-TND-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	4N60G-TND-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	4N60G-A-TM3-T Unisonic Technologies Co Ltd	1	Power Field-Effect Transistor	4N60G-A-TM3-T	3D model not available Symbol and footprint not available 0	0 Build or Request
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