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70V7339S166BCGI
Renesas Electronics
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1 | The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7339S166BCGI |
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70V7319S166BF8
Renesas Electronics
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1 | The 70V7319 is a high-speed 256K x 18 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7319S166BF8 |
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70V7339S166BCI
Renesas Electronics
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1 | The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7339S166BCI |
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70V7319S166BCI
Renesas Electronics
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1 | The 70V7319 is a high-speed 256K x 18 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7319S166BCI |
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70V7319S133BCI8
Renesas Electronics
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1 | The 70V7319 is a high-speed 256K x 18 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7319S133BCI8 |
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70V7339S166BF
Renesas Electronics
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1 | The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7339S166BF |
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70V7339S200BC
Renesas Electronics
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1 | The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7339S200BC |
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70V7319S133BFI
Renesas Electronics
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1 | The 70V7319 is a high-speed 256K x 18 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7319S133BFI |
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70V7339S166BCI8
Renesas Electronics
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1 | The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7339S166BCI8 |
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70V7339S133BF8
Renesas Electronics
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1 | The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7339S133BF8 |
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70V7339S200BC8
Renesas Electronics
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1 | The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7339S200BC8 |
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70V7319S166BCGI
Renesas Electronics
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1 | The 70V7319 is a high-speed 256K x 18 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7319S166BCGI |
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70V7319S2133BCGI
Renesas Electronics Corporation
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1 | Multi-Port SRAM, 256KX18, 4.2ns, CMOS, PBGA256 | 70V7319S2133BCGI |
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70V7319S133BFG
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX18, 4.2ns, CMOS, PBGA208 | 70V7319S133BFG |
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70V7319S200BF
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX18, 10ns, CMOS, PBGA208 | 70V7319S200BF |
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70V7319S133DD
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX18, 15ns, CMOS, PQFP144 | 70V7319S133DD |
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70V7319S133BCGI
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX18, 4.2ns, CMOS, PBGA256 | 70V7319S133BCGI |
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70V7319S2133BFG
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX18, 4.2ns, CMOS, PBGA208 | 70V7319S2133BFG |
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70V7339S133BFI8
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 512KX18, 15ns, CMOS, PBGA208 | 70V7339S133BFI8 |
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70V7319S200BFI
Renesas Electronics Corporation
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1 | Multi-Port SRAM, 256KX18, 10ns, CMOS, PBGA208 | 70V7319S200BFI |
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70V7339S166BCG
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 512KX18, 3.6ns, CMOS, PBGA256 | 70V7339S166BCG |
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70V7319S200BCI
Renesas Electronics Corporation
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1 | Multi-Port SRAM, 256KX18, 10ns, CMOS, PBGA256 | 70V7319S200BCI |
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70V7339S133BCG8
Renesas Electronics Corporation
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1 | Multi-Port SRAM, 512KX18, 4.2ns, CMOS, PBGA256 | 70V7339S133BCG8 |
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70V7319S133BFI
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX18, 15ns, CMOS, PBGA208 | 70V7319S133BFI |
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70V7319S166BCG1
Renesas Electronics Corporation
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1 | Multi-Port SRAM, 256KX18, 3.6ns, CMOS, PBGA256 | 70V7319S166BCG1 |
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