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70V7599S133BC8
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7599S133BC8 |
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70V7519S133BFI
Renesas Electronics
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1 | The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7519S133BFI |
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70V7599S166BF8
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7599S166BF8 |
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70V7599S133BFI
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7599S133BFI |
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70V7519S166DRI
Renesas Electronics
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1 | The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V7519S166DRI |
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70V7599S166BCI8
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7599S166BCI8 |
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70V7599S133DR
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V7599S133DR |
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70V7599S133BCI
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7599S133BCI |
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70V7599S133BCI8
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7599S133BCI8 |
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70V7599S166DR
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V7599S166DR |
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70V7599S166DRI
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V7599S166DRI |
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70V7599S166BCI
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7599S166BCI |
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70V7519S133DRI
Renesas Electronics
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1 | The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V7519S133DRI |
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70V7519S133DR
Renesas Electronics
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1 | The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V7519S133DR |
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70V7519S166DR
Renesas Electronics
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1 | The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V7519S166DR |
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70V7599S133BFI8
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70V7599S133BFI8 |
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70V7599S133DRI
Renesas Electronics
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1 | The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V7599S133DRI |
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70V7519S166DRGI
Renesas Electronics Corporation
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1 | Multi-Port SRAM, 256KX36, 3.6ns, CMOS, PQFP208 | 70V7519S166DRGI |
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70V7519S133DR
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX36, 15ns, CMOS, PQFP208 | 70V7519S133DR |
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70V7519S133BF
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX36, 15ns, CMOS, PBGA208 | 70V7519S133BF |
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70V7519S133BCGI8
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX36, 4.2ns, CMOS, PBGA256 | 70V7519S133BCGI8 |
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70V7519S133BFG
Renesas Electronics Corporation
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1 | Multi-Port SRAM, 256KX36, 4.2ns, CMOS, PBGA208 | 70V7519S133BFG |
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70V7519S166BF8
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 256KX36, 12ns, CMOS, PBGA208 | 70V7519S166BF8 |
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70V7589S133BCI8
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 64KX36, 4.2ns, CMOS, PBGA256 | 70V7589S133BCI8 |
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70V7599S200BCGI
Integrated Device Technology Inc
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1 | SRAM | 70V7599S200BCGI |
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