7703- Model Download Search Results
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770-3115
Wago
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1 | Plug for PCBs; straight; 5-pole; Cod. I | Other | 770-3115 |
3
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232-277/039-000
Wago
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1 | THT female header; angled; Pin spacing 5.08 mm; 17-pole; Locking lever; 0.6 x 1.0 mm solder pin | Other | 232-277/039-000 |
3
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232-177/039-000
Wago
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1 | THT female header; straight; Pin spacing 5.08 mm; 17-pole; Locking lever; 0.6 x 1.0 mm solder pin | Other | 232-177/039-000 |
3
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737-703
Wago
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1 | Triple-deck PCB terminal block; 2.5 mm²; Pin spacing 10 mm; 9-pole; CAGE CLAMP® | Other | 737-703 |
3
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2944770301
Fair-Rite
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1 | Fair-Rite Ferrite Bead (PC Bead Core), 11.8 x 13.45 x 11.2mm | Other | 2944770301 |
3
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TLC7703IPWR
Texas Instruments
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1 | Voltage Supervisor with Programmable Time Delay | Small Outline Packages | TLC7703IPWR |
3
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TLC7703IPWRG4
Texas Instruments
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1 | Texas Instruments TLC7703IPWRG4, Voltage Supervisor 2.7V max. 8-Pin, TSSOP | Small Outline Packages | TLC7703IPWRG4 |
3
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TLC7703QPW
Texas Instruments
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1 | Supervisory Circuits Sngl SVS f/3.0V Sys w/Prg Time Delay | Small Outline Packages | TLC7703QPW |
3
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TLC7703QPWG4
Texas Instruments
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1 | TLC7703QPWG4, Voltage Supervisor 2.56V Micropower Supply 8-Pin TSSOP | Small Outline Packages | TLC7703QPWG4 |
3
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TPS77033QDBVRQ1
Texas Instruments
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1 | Linear Voltage Regulator IC Positive Fixed 1 Output 50mA SOT-23-5 | SOT23 (5-Pin) | TPS77033QDBVRQ1 |
3
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AD7703BNZ
Analog Devices
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1 | AD7703BNZ, 20 bit ADC SPI, 20-Pin PDIP | Dual-In-Line Packages | AD7703BNZ |
3
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71V67703S80BQGI8
Renesas Electronics
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1 | The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V67703S80BQGI8 |
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71V67703S80BQI8
Renesas Electronics
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1 | The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V67703S80BQI8 |
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AX7MAF1-807.7038C
ABRACON
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1 | XTAL OSC XO 807.7038MHZ CML SMD | Other | AX7MAF1-807.7038C |
3
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71V67703S85BQGI8
Renesas Electronics
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1 | The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V67703S85BQGI8 |
3
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AX5MBF1-807.7038C
ABRACON
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1 | OSC XO 807.7038MHZ 2.5V CML | Other | AX5MBF1-807.7038C |
3
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71V67703S85BQG8
Renesas Electronics
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1 | The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V67703S85BQG8 |
3
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71V67703S75BQ
Renesas Electronics
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1 | The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V67703S75BQ |
3
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74477030
Würth Elektronik
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1 | WE-PD SMT Shielded Power Inductor Size 1280; L = 1000 µH ±20%; IR = 0,65 A; Isat = 0,7 A; RDC = 1180 mΩ | Other | 74477030 |
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71V67703S80BQG8
Renesas Electronics
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1 | The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V67703S80BQG8 |
3
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AX5MCF1-807.7038
ABRACON
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1 | OSC XO 807.7038MHZ 1.8V CML | Other | AX5MCF1-807.7038 |
3
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M20-9770346
Harwin
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1 | M20: 3 Pos Plug SIL Straight 3mm THT Connector 5.8mm pin Tin | Header, Vertical | M20-9770346 |
3
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AX7MCF18077038T
ABRACON
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1 | Other | AX7MCF18077038T |
3
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71V67703S80BQI
Renesas Electronics
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1 | The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V67703S80BQI |
3
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09653297703
HARTING
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1 | D-Sub THR/SMC 25pin male straight, stamped, w/o board locks, 4-40UNC screw lock, PL3 | Other | 09653297703 |
3
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