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71T75802S166PFG8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | Quad Flat Packages | 71T75802S166PFG8 |
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71T75802S100BGI
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S100BGI |
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71T75802S133PFG
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | Quad Flat Packages | 71T75802S133PFG |
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71T75802S100BG
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S100BG |
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71T75802S166PFG
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | Quad Flat Packages | 71T75802S166PFG |
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71T75802S150BGGI
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S150BGGI |
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71T75802S150BG8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S150BG8 |
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71T75802S166BGGI
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S166BGGI |
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71T75802S166BGGI8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S166BGGI8 |
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71T75802S100BGGI8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S100BGGI8 |
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71T75802S166BG8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S166BG8 |
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71T75802S133PFGI8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | Quad Flat Packages | 71T75802S133PFGI8 |
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71T75802S133BGG8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S133BGG8 |
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71T75802S150BGGI8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S150BGGI8 |
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71T75802S133PFGI
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | Quad Flat Packages | 71T75802S133PFGI |
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802S1103
Vishay Intertechnologies
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1 | Potentiometer, 5W, 10000ohm, 224V, 3% +/-Tol, 20ppm/Cel, 10 Turn(s), | 802S1103 |
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IDT71V65802S133BQ
Integrated Device Technology Inc
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1 | ZBT SRAM, 512KX18, 4.2ns, CMOS, PBGA165 | IDT71V65802S133BQ |
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IDT71T65802S100PF
Integrated Device Technology Inc
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1 | ZBT SRAM, 512KX18, 5ns, CMOS, PQFP100 | IDT71T65802S100PF |
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IDT71V67802S150BG
Integrated Device Technology Inc
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1 | Cache SRAM, 512KX18, 3.8ns, CMOS, PBGA119 | IDT71V67802S150BG |
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IDT71T75802S100PFI8
Integrated Device Technology Inc
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1 | ZBT SRAM, 1MX18, 5ns, CMOS, PQFP100 | IDT71T75802S100PFI8 |
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IDT71T67802S166PF
Integrated Device Technology Inc
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1 | Cache SRAM, 512KX18, 3.5ns, CMOS, PQFP100 | IDT71T67802S166PF |
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IDT71V67802S133PF
Integrated Device Technology Inc
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1 | Cache SRAM, 512KX18, 4.2ns, CMOS, PQFP100 | IDT71V67802S133PF |
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ZZW-MO-1008-02S10D
Amphenol Corporation
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1 | MIL Series Connector, 2 Contact(s), Aluminum Alloy, Female, Crimp Terminal, Plug | ZZW-MO-1008-02S10D |
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71T75802S100BG8
Integrated Device Technology Inc
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1 | ZBT SRAM, 1MX18, 5ns, CMOS, PBGA119 | 71T75802S100BG8 |
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IDT71T75802S166BGI8
Renesas Electronics Corporation
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1 | ZBT SRAM, 1MX18, 3.5ns, CMOS, PBGA119 | IDT71T75802S166BGI8 |
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