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AFGHL25T120RLD
onsemi
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1 | Insulated Gate Bipolar Transistor, 48A I(C), 1200V V(BR)CES, N-Channel, TO-247 | AFGHL25T120RLD |
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AFGHL40T65RQDN
onsemi
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1 | AEC Q101 qualified; Short circuit rated; Maximum Junction Temperature : TJ = 175℃; Positive Temperature Co-efficient for Easy Parallel Operating; Tighten Parameter Distribution; Low Saturation Voltage | AFGHL40T65RQDN |
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ENGAFGHL50T65SQDC
onsemi
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1 | Insulated Gate Bipolar Transistor, 88.7A I(C), 650V V(BR)CES, N-Channel, TO-247 | ENGAFGHL50T65SQDC |
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